Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-20T05:26:07.808Z Has data issue: false hasContentIssue false
  • English
  • Français

A study of texture in diamond films as functions of methane concentration during chemical vapor deposition and post-growth hydrogen treatment

Published online by Cambridge University Press:  03 March 2011

D. Ganesana  and
S.C. Sharma
D. Ganesana
Affiliation:
Department of Physics and Materials Science & Engineering Program, The University of Texas at Arlington, Arlington, Texas 76019-0059
S.C. Sharma
Affiliation:
Department of Physics and Materials Science & Engineering Program, The University of Texas at Arlington, Arlington, Texas 76019-0059
Get access

Abstract

We have studied effects of hydrogen on texture in diamond films grown by hot filament assisted chemical vapor deposition by utilizing x-ray diffraction (XRD). We present results for the relative intensities of the XRD peaks originating from the (111). (220), and (400) crystallographic planes as functions of CH4/H2 makeup during growth and post-growth H2 treatment of the films. The texture of the films can be controlled by varying composition of the CH4/H2 mixture during growth and also by subjecting films to hydrogen treatment. The complementary characterization of these films by XRD, Raman spectroscopy, and positron annihilation techniques exemplifies a correlation among film texture, diamond contcnt, and dcnsity of the microvoids in the films.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 7 , July 1995 , pp. 1764 - 1771
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Thin Film Diamond, edited by Lettington, A. H. and Seeds, J. W., Philos. Trans.: Phys. Scien. Eng. 342, 193 (1993).Google Scholar
2New Diamond Science and Technology, edited by Messier, R., Glass, J. T., Butler, J., and Roy, R. (Mater. Res. Soc. Symp. Int. Proc. NDST–2, Pittsburgh, PA, 1991).Google Scholar
3Angus, J. C., Argoitia, A., Gat, R., Li, Z., Sunkara, M., Wang, L., and Wang, Y., Philos. Trans. R. Soc. London A 342, 193 (1993).Google Scholar
4Large Bandgap Electronic Materials and Components, edited by Davis, R.F., Proc. IEEE 79 (1991).Google Scholar
5Geis, M. W., Appl. Phys. Lett. 55, 550 (1989).CrossRefGoogle Scholar
6Kobashi, K., Nishimura, K., Miyata, K., Kumagai, K., and Nakaue, A., J. Mater. Res. 5, 2469 (1990).CrossRefGoogle Scholar
7Wild, Ch., Herres, N., and Koidl, P., J. Appl. Phys. 68, 973 (1990).CrossRefGoogle Scholar
8Sprang, H., Busmann, H. G., Lauer, S., and Hertel, I. V., Appl. Phys. A 55, 347 (1992).CrossRefGoogle Scholar
9Baik, Y. J. and Eun, K. Y., Thin Solid Films 214, 123 (1992).CrossRefGoogle Scholar
10van der Drift, A., Philips Res. Rep. 22, 267 (1967).Google Scholar
11Stoner, B. R., Sahaida, S. R., Bade, J. P., Southworth, P., and Ellis, P. J., J. Mater. Res. 8, 1334 (1993).CrossRefGoogle Scholar
12Tamor, M. A. and Everson, M. P., J. Mater. Res. 9, 1839 (1994).CrossRefGoogle Scholar
13Ganesan, D. and Sharma, S. C., in Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by Carter, C. H. Jr., Gildenblat, G., Nakamura, S., and Nemanich, R. J. (Mater. Res. Soc. Symp. Proc. 339, Pittsburgh, PA, 1994), p. 319.Google Scholar
14Sharma, S. C., Green, M., Hyer, R. C., Dark, C. A., Black, T. D., Chourasia, A. R., Chopra, D. R., and Mishra, K. K., J. Mater. Res. 5, 2424 (1990).CrossRefGoogle Scholar
15Hyer, R. C., Green, M., and Sharma, S. C., Phys. Rev. B 49, 14573 (1994).CrossRefGoogle Scholar
16See Powder Diffraction File, Set 6–10, Card No. 6–0675 (Joint Committee on Powder Diffraction Standards, Swarthmore, PA, 1967).Google Scholar
17Sharma, S. C., Johnson, R. M., and Diana, L.M., Nondestructive Evaluation of Metals by Positron Annihilation Techniques, Novel NDE Methods for Materials, edited by Rath, B.B. (The Metallurgical Society, AIME, Warrendale, PA, 1983), pp. 45–61.Google Scholar