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A study of silicide formation from LPCVD-tungsten films: Film texture and growth kineticsa

Published online by Cambridge University Press:  31 January 2011

S-L. Zhang ,
R. Buchta  and
M. Östling
S-L. Zhang
Affiliation:
Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista, Sweden, and The Royal Institute of Technology–Electrum, Solid State Electronics, P.O. Box 1298, S–164 28 Kista, Sweden
R. Buchta
Affiliation:
Swedish Institute of Microelectronics, P.O. Box 1084, S–164 21 Kista, Sweden
M. Östling
Affiliation:
The Royal Institute of Technology-Electrum, Solid State Electronics, P.O. Box 1298, S–164 28 Kista, Sweden
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Abstract

Tungsten disilicide (WSi2) was formed by annealing tungsten (W) films of 330 nm and 750 nm prepared by low pressure chemical vapor deposition (LPCVD) from tungsten hexafluoride (WF6) on Czochralski 〈100〉-Si substrates. The silicide was found to grow continuously from the WSi2/W interface. The thickness of the formed WSi2 was observed by Rutherford backscattering measurements (RBS) to increase parabolically with the annealing time, with an activation energy of 2.6 eV/atom. The crystal structure of the formed WSi2 and the unreacted W films was analyzed using x-ray diffraction (XRD) technique. The thermal history of the samples was found to play an important role for the film texture of the unreacted W and formed WSi2, indicating that the fast and inexpensive method, XRD, applied as a thickness monitor for kinetics studies of WSi2 growth will undoubtedly introduce large errors. The as-deposited W (on Si) and the unreacted W (on WSi2) were found to be under a tensile stress, as observed by means of the XRD technique.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 9 , September 1991 , pp. 1886 - 1891
Copyright
Copyright © Materials Research Society 1991

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