Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-23T07:51:54.806Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Ru barrier failure in the Cu/Ru/Si system

Published online by Cambridge University Press:  31 January 2011

M. Damayanti ,
T. Sritharan ,
S.G. Mhaisalkar ,
E. Phoon  and
L. Chan
M. Damayanti*
Affiliation:
School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798; and Chartered Semiconductor Manufacturing Ltd., Woodlands Industrial Park D, Singapore 738406
T. Sritharan
Affiliation:
School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798
S.G. Mhaisalkar
Affiliation:
School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798
E. Phoon
Affiliation:
School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798
L. Chan
Affiliation:
Chartered Semiconductor Manufacturing Ltd., Woodlands Industrial Park D, Singapore 738406
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

The reaction mechanisms and related microstructures in the Cu/Si, Ru/Si, and Cu/Ru/Si metallization system were studied experimentally. With the help of sheet resistance measurements, x-ray diffraction, field-emission scanning electron microscopy, secondary ion mass spectroscopy, and transmission electron microscopy, the metallization structure with Ru barrier layer was observed to fail completely at temperatures around 700 °C, regardless of the Ru thickness because of the formation of polycrystalline Ru2Si3 followed by Cu3Si protrusions.

Keywords

DiffusionCuRu
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 9 , September 2007 , pp. 2505 - 2511
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1International Technology Roadmap for Semiconductors-2004 Updates, Sematech Austin, TXhttp://www.itrs.net/Common/2004Update/2004_08_Interconnect.pdf accessed April 20, 2007Google Scholar
2Andricacos, P.C., Uzoh, C., Dukovic, J.O., Horkans, J.Deligianni, H.: Damascene copper electroplating for chip interconnections. Electrochem. Microfabrication 42, 5 1998Google Scholar
3Chan, R., Arunagiri, T.N., Zhang, Y., Chyan, O., Wallace, R.M., Kim, M.J.Hurdc, T.Q.: Diffusion studies of copper on ruthenium thin film. Electrochem. Solid-State Lett. 7, G154 2004CrossRefGoogle Scholar
4Lane, M.W., Murray, C.E., McFeely, F.R., Vereecken, P.M.Rosenberg, R.: Liner materials for direct electrodeposition of Cu. Appl. Phys. Lett. 83, 12 2003CrossRefGoogle Scholar
5Massalski, T.B.: Cu-Ru phase diagram, in Binary Alloy Phase Diagrams 2nd ed. edited by T.B. Massalki and H. Okamoto (American Society of Metals, Materials Park, OH, 1990), p. 1467Google Scholar
6Zhang, Y., Huang, L., Arunagiri, T.N., Oieda, O., Flores, S., Chyan, O.Wallace, R.M.: Underpotential deposition of copper on electrochemically prepared conductive ruthenium oxide surface. Electrochem. Solid-State Lett. 7, C107 2004CrossRefGoogle Scholar
7Josell, D., Wheeler, D., Witt, C.Moffat, T.P.: Seedless superfill: Copper electrodeposition in trenches with ruthenium barriers. Electrochem. Solid-State Lett. 6, C143 2003CrossRefGoogle Scholar
8Chyan, O., Arunagiri, T.N.Panuswamy, T.: Electrodeposition of copper thin film on ruthenium: A potential diffusion barrier for Cu interconnects. J. Electrochem. Soc. 150, C347 2003CrossRefGoogle Scholar
9Damayanti, M., Sritharan, T., Gan, Z.H., Mhaisalkar, S.G., Jiang, N.Chan, L.: Ruthenium barrier/seed layer for Cu/low-κ metallization: Crystallographic texture, roughness, diffusion and adhesion. J. Electrochem. Soc. 153, J41 2006CrossRefGoogle Scholar
10Damayanti, M., Sritharan, T., Gan, Z.H.Mhaisalkar, S.G.: Effects of dissolved nitrogen in improving barrier properties of ruthenium. Appl. Phys. Lett. 88, 1 2006CrossRefGoogle Scholar
11JCPDS No. 04-0836. International Center for Diffraction Data American Ceramic Society, Swarthmore, PA, 1981Google Scholar
12Chromik, R.R., Neils, W.K.Cotts, E.J.: Thermodynamic and kinetic study of solid state reactions in the Cu–Si system. J. Appl. Phys. 86, 4273 1999CrossRefGoogle Scholar
13JCPDS No. 23-0224. International Center for Diffraction Data American Ceramic Society, Swarthmore, PA, 1981Google Scholar
14Istratova, A.A.Weber, E.R.: Physics of copper in silicon. J. Electrochem. Soc. 149, G21 2002CrossRefGoogle Scholar
15Suh, B.S., Lee, Y.J., Hwang, J.S.Park, C.O.: Properties of reactively sputtered WNx as Cu diffusion barrier. Thin Solid Films 348, 299 1999CrossRefGoogle Scholar
16Cabral, C. Jr., Lavoie, C., Harper, J.M.E.Jordan-Sweet, J.: The use of in situ x-ray diffraction, optical scattering and resistance analysis techniques for evaluation of copper diffusion barriers in blanket films and damascene structures. Thin Solid Films 397, 194 2001CrossRefGoogle Scholar
17JCPDS No. 06-0663. International Center for Diffraction Data American Ceramic Society, Swarthmore, PA, 1981Google Scholar
18JCPDS No. 32-0978. International Center for Diffraction Data American Ceramic Society, Swarthmore, PA, 1981Google Scholar
19Peterson, C.S., Baglin, J.E.E., Dempsey, J.J., Huerle, F.M.D.Placa, S. La: Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability. J. Appl. Phys. 53, 4866 1982CrossRefGoogle Scholar