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Study of quasi-amorphous to nanocrystalline phase transition in thermally evaporated CuInS2 thin films

Published online by Cambridge University Press:  03 March 2014

P. Suchismita Behera ,
Desapogu Rajesh ,
Sreejith Karthikeyan ,
C.S. Sunandana  and
D. Bharathi Mohan
P. Suchismita Behera
Affiliation:
Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University, Kalapet, Puducherry 605 014
Desapogu Rajesh
Affiliation:
School of Physics, University of Hyderabad, Hyderabad, Andhra Pradesh 500 046
Sreejith Karthikeyan
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis 55455-0170
C.S. Sunandana
Affiliation:
School of Physics, University of Hyderabad, Hyderabad, Andhra Pradesh 500 046
D. Bharathi Mohan*
Affiliation:
Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University, Kalapet, Puducherry 605 014
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

CuInS2 thin films with thickness ranging from 196 to 1000 nm were prepared from a source containing CuInS2 nanocrystals by using thermal evaporation method. Annealed films of CuInS2 show the quasi-amorphous to crystalline phase transition, probed through x-ray diffraction (XRD), UV-visible spectrometer, and Raman spectroscopy. From XRD, the tetragonal distortion (η) is found to be ≈1, confirming the arrangement of an extended double lattice structure of chalcopyrite phase. The surface morphology of quasi-amorphous film exhibits a very smooth surface, whereas crystalline film shows a very rough surface of CuInS2 as observed from atomic force microscopy. Crystallite size and rms roughness increase from 23 to 310 nm and from 1.5 to 36.5, respectively, with increasing film thickness as well as with increasing annealing temperature due to the crystallization process. Micro-Raman study evidencing the presence of a strong Raman A1 mode at 303 cm−1, due to the symmetric vibration of anion sublattice of CuInS2 structure. A fundamental band edge is observed in as-deposited quasi-amorphous CuInS2 films, while bulk energy band absorption and excitonic band transition are observed in crystalline films. A sharp drop in both reflectance and transmittance near the energy band gap region is observed in thick films due to a very strong absorption of crystalline phase of CuInS2.

Keywords

Photovoltaicsthin filmsannealingnanostructurex-ray diffractionatomic force microscopeRaman spectroscopyoptical properties
Type
Articles
Information
Journal of Materials Research , Volume 29 , Issue 4 , 28 February 2014 , pp. 542 - 555
Copyright
Copyright © Materials Research Society 2014 

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