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Structure and surface morphology of highly conductive RuO2 films grown on MgO by oxygen-plasma-assisted molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

Y. Gao ,
G. Bai ,
Y. Liang ,
G. C. Dunham  and
S. A. Chambers
Y. Gao*
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, MS K2–12, Richland, Washington 99352
G. Bai
Affiliation:
Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439
Y. Liang
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, MS K2–12, Richland, Washington 99352
G. C. Dunham
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, MS K2–12, Richland, Washington 99352
S. A. Chambers
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, MS K2–12, Richland, Washington 99352
*
a)Author to whom correspondence should be addressed.
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Abstract

Metallic RuO2(110) thin films were grown by oxygen-plasma-assisted molecular beam epitaxy (MBE) on MgO(100) and (110) at 425 °C. RuO2 films on MgO(100) are epitaxial with two variants, while RuO2 films on MgO(110) are highly oriented with the (110) face parallel to the substrate surface. The two variants in the RuO2(110) epitaxial films resulted in a twofold mosaic microstructure. The RuO2(110) epitaxial films are very smooth and exhibit a low resistivity of ∼ 36 μΩ-cm. In contrast, the RuO2(110) textured films are very rough, and consist of small grains with a poor in-plane alignment. A slight higher resistivity (49 μΩ-cm) was found for the RuO2 (110) textured films grown on MgO(110).

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 7 , July 1997 , pp. 1844 - 1849
Copyright
Copyright © Materials Research Society 1997

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