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Structural stability and Raman scattering of InN nanowires under high pressure

Published online by Cambridge University Press:  31 January 2011

L.D. Yao ,
S.D. Luo ,
X. Shen ,
S.J. You ,
L.X. Yang ,
S.J. Zhang ,
S. Jiang ,
Y.C. Li ,
J. Liu  and
K. Zhu
...Show all authors
L.D. Yao
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
S.D. Luo
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
X. Shen
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
S.J. You
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
L.X. Yang
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
S.J. Zhang
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
S. Jiang
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
Y.C. Li
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
J. Liu
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
K. Zhu
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
Y.L. Liu
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
W.Y. Zhou
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
L.C. Chen
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
C.Q. Jin
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
R.C. Yu*
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
S.S. Xie
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

High-pressure in situ angular dispersive x-ray diffraction study on the wurtzite-type InN nanowires has been carried out by means of the image-plate technique and diamond-anvil cell (DAC) up to about 31.8 GPa. The pressure-induced structural transition from the wurtzite to a rocksalt-type phase occurs at about 14.6 GPa, which is slightly higher than the transition pressure of InN bulk materials (∼12.1 GPa). The relative volume reduction at the transition point is close to 17.88%, and the bulk modulus B0 is determined through fitting the relative volume-pressure experimental data related to the wurtzite and rocksalt phases to the Birch–Murnaghan equation of states. Moreover, high-pressure Raman scattering for InN nanowires were also investigated in DAC at room temperature. The corresponding structural transition was confirmed by assignment of phonon modes. We calculated the mode Grüneisen parameters for the wurtzite and rocksalt phases of InN nanowires.

Keywords

NanoscaleX-ray Diffraction (XRD)Raman Spectroscopy
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 12 , December 2010 , pp. 2330 - 2335
Copyright
Copyright © Materials Research Society 2010

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