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Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy

Published online by Cambridge University Press:  11 March 2011

Xiuhua Wang ,
Shanshan Chen ,
Wei Lin ,
Shuping Li ,
Hangyang Chen ,
Dayi Liu  and
Junyong Kang
Xiuhua Wang
Affiliation:
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Shanshan Chen
Affiliation:
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Wei Lin
Affiliation:
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Shuping Li
Affiliation:
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Hangyang Chen
Affiliation:
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Dayi Liu
Affiliation:
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Junyong Kang*
Affiliation:
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

InN thin films were grown on GaN underlayer with sapphire substrate by metalorganic vapor phase epitaxy under different growth conditions, including growth temperature, reactor pressure, and V/III ratio. X-ray diffraction and Raman scattering measurements reveal that the samples grown at different temperatures are mixed with different phases, especially at higher temperature. The calculated phonon dispersion curves of wurtzite, zinc-blende, and rocksalt structures show that the samples mainly contain wurtzite structure and small amount of zinc-blende phase, while the samples grown at 600 °C and 650 °C include a new structural phase other than the three well-known ones. This analysis demonstrates that the InN epilayer grown at 550 °C has the highest phase purity and better crystalline quality. Besides the key role of growth temperature, a relatively higher reactor pressure and lower V/III ratio are found to be more conducive to the improvement of crystalline quality, though they have a modest effect on the InN microstructure.

Keywords

III-VRaman SpectroscopyX-ray Diffraction (XRD)
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 6 , 28 March 2011 , pp. 775 - 780
Copyright
Copyright © Materials Research Society 2011

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