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Stress-induced formation of structural defects on the {311} planes of silicon

Published online by Cambridge University Press:  03 March 2011

Z. Weng-Sieh ,
P. Krulevitch ,
R. Gronsky  and
G.C. Johnson
Z. Weng-Sieh
Affiliation:
Department of Materials Science & Mineral Engineering, University of California-Berkeley, and Lawrence Berkeley Laboratory, Materials Sciences Division, Berkeley, California 94720
P. Krulevitch
Affiliation:
Department of Mechanical Engineering, University of California-Berkeley, Berkeley, California 94720
R. Gronsky
Affiliation:
Department of Materials Science & Mineral Engineering, University of California-Berkeley, and Lawrence Berkeley Laboratory, Materials Sciences Division, Berkeley, California 94720
G.C. Johnson
Affiliation:
Department of Mechanical Engineering, University of California-Berkeley, Berkeley, California 94720
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Abstract

Structural defects occurring on the {311} planes of single crystal silicon have been observed near the bottom oxide corner in silicon-on-insulator structures formed by selective epitaxial growth. These {311} defects exhibit a preferential orientation and are clustered near the silicon/silicon dioxide interface. This new observation provides an opportunity to study the mechanism of {311} defect generation in a system with discernible microstructure and stress state. High resolution electron microscopy combined with analytical and numerical three-dimensional stress modeling are used to show the dependence of these {311} defects on the local stress field, and to establish their origin in terms of a homogeneous dislocation nucleation model.

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Articles
Information
Journal of Materials Research , Volume 9 , Issue 8 , August 1994 , pp. 2057 - 2065
Copyright
Copyright © Materials Research Society 1994

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