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Stressed solid-phase epitaxial growth of (011) Si

Published online by Cambridge University Press:  03 March 2011

N.G. Rudawski ,
K.S. Jones  and
R. Gwilliam
K.S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400
R. Gwilliam
Affiliation:
Nodus Accelerator Laboratory, Advanced Technology Institute, Surrey Ion Beam Centre, Guildford, Surrey GU2 7XH, United Kingdom
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Abstract

The solid-phase epitaxial growth kinetics of amorphized (011) Si with application of in-plane uniaxial stress to magnitude of 0.9 ± 0.1 GPa were studied. Tensile stresses did not appreciably change the growth velocity compared with the stress-free case, whereas compression tended to retard the growth velocity to approximately one-half the stress-free value. The results are explained using a prior generalized atomistic model of stressed solid-solid phase transformations. In conjunction with prior observations of stressed solid-phase epitaxial growth of (001) Si, it is advanced that the activation volume tensor associated with ledge migration may be substrate orientation-dependent.

Keywords

EpitaxySiStress/strain relationship
Type
Rapid Communications
Information
Journal of Materials Research , Volume 24 , Issue 2 , February 2009 , pp. 305 - 309
Copyright
Copyright © Materials Research Society 2009

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References

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