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Strain-free, ultra-high purity ZnSe layers grown by molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

R. M. Park ,
C. M. Rouleau ,
M. B. Troffer ,
T. Koyama  and
T. Yodo
R. M. Park
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
C. M. Rouleau
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
M. B. Troffer
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
T. Koyama
Affiliation:
Tsukuba Research Laboratory, Nippon Sheet Glass Co. Ltd., 5-4 Tokodai, Tsukuba City, Ibaraki Pref. 300-26, Japan
T. Yodo
Affiliation:
Tsukuba Research Laboratory, Nippon Sheet Glass Co. Ltd., 5-4 Tokodai, Tsukuba City, Ibaraki Pref. 300-26, Japan
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Abstract

ZnSe layers have been grown by molecular beam epitaxy on high-purity, high-quality ZnSe wafers [(100) oriented] cut from ingots grown by the iodine vapor transport method. Photoluminescence (PL) analysis indicates the homoepitaxial ZnSe material to be of ultra-high purity as well as being strain-free relative to ZnSe/(100) GaAs layers which exhibit in-plane biaxial tension. The 10 K PL spectra recorded from homoepitaxial layers exhibit unsplit free- and donor-bound exciton transitions of comparable intensity together with a strong peak at 2.7768 eV believed to be the so-called Iv transition in relaxed ZnSc. The ultra-high purity nature of the homoepitaxial layers is attributed to the high purity of the substrate material in addition to the use of high purity Zn and Se source materials in this work.

Type
Materials Communications
Information
Journal of Materials Research , Volume 5 , Issue 3 , March 1990 , pp. 475 - 477
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1shahzad, K., Olego, D. J., and Cammack, D. A., Phys. Rev. B 39, 13016 (1989).CrossRefGoogle Scholar
2Shahzad, K., Phys. Rev. B 38, 8309 (1988).Google Scholar
3Park, M., Mar, H. A., and Salansky, N.M., j. Vac. Sci. Technol B3 1637 (1985).Google Scholar
4Menda, K., Takayasu, I., Minato, T., and Kawashima, M., J. Cryst.Growth 86, 342 (1988)Google Scholar
5Ohkawa, K., Karasawa, T., Yoshida, A., Hirao, T., and Mitsuyu, T., AppL Phys. Lett. 54 2553 (1989).CrossRefGoogle Scholar
6Koyama, T., Yodo, T., Oka, H., Yamashita, K., and Yamasaki, T., J.Cryst. Growth 91, 639 (1988).CrossRefGoogle Scholar
7Dean, P. J., Herbert, D. C., Werkhoven, C. J., Fitzpatrick, B. J., and Bhargava, R.N., Phys. Rev. B 23, 4888 (1981).CrossRefGoogle Scholar