Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-27T01:11:15.389Z Has data issue: false hasContentIssue false
  • English
  • Français

Stability of As and B doped Si with respect to overlaying CoSi2 and TiSi2 thin films

Published online by Cambridge University Press:  31 January 2011

K. Maex ,
G. Ghosh ,
L. Delaey ,
V. Probst ,
P. Lippens ,
L. Van den hove  and
R. F. De Keersmaecker
K. Maex
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
G. Ghosh
Affiliation:
Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, de Croylaan 2, 3030 Leuven, Belgium
L. Delaey
Affiliation:
Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, de Croylaan 2, 3030 Leuven, Belgium
V. Probst
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, Federal Republic of Germany
P. Lippens
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
L. Van den hove
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
R. F. De Keersmaecker
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
Get access

Abstract

The thermodynamic equilibrium of structures consisting of a thin film silicide (TiSi2 or CoSi2) on doped Si (with As or B) is investigated. Isothermal sections of the ternary phase diagrams for Ti–Si–B, Co–Si–B, Ti–Si–As, and Co–Si–As have been evaluated, indicating the stability of high B concentrations in Si underneath a CoSi2 layer, the instability of high As concentrations in Si underneath a CoSi2 layer, and of B and As concentrations underneath a TiSi2 layer. The obtained thermodynamic predictions agree very well with experimental results (i) on the redistribution of dopants during silicide formation, (ii) on the diffusion of dopants from an ion implanted silicide, and (iii) on the stability of highly doped regions underneath the silicide, both for the case of TiSi2 and CoSi2. It is shown that even though the inaccuracy of reported thermodynamic data is substantial, thermodynamic calculations provide a useful guidance and are consistent with the experimental results.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 5 , October 1989 , pp. 1209 - 1217
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Nicolet, M-A. and Lau, S. S., in VLSI Electronics, Microstructure Science, edited by Einspruch, N. G. (Academic Press, Orlando, FL, 1983), Vol. 6, p. 329.Google Scholar
2Revesz, P., Gyimesi, J., and Zsoldos, E., J. Appl. Phys. 54, 1860 (1984).CrossRefGoogle Scholar
3Chow, T. P., Katz, W., Goehner, R., and Smith, G., J. Electrochem. Soc. 132, 1914 (1985).CrossRefGoogle Scholar
4Maex, K., Keersmaecker, R. F. De, and Alkemade, P. F. A., Proc. Materials Research Society Symp., edited by Appleton, B.R., Eisen, F. H., and Sigmon, T.W. (Materials Research Society, Pittsburgh, PA, 1985), Vol. 45, p. 153.Google Scholar
5Okabayashi, H., Morimoto, M., and Nagasawa, E., IEEE Trans. Electron Devices 31, 1329 (1984).CrossRefGoogle Scholar
6Maex, K., hove, L. Van den, and Keersmaecker, R. De, Thin Solid Films 140, 149 (1986).CrossRefGoogle Scholar
7hove, L. Van den, Wolters, R., Maex, K., Keersmaecker, R. De, and Declerck, G., IEEE Trans, on Electron Devices ED-34, 554 (1987).CrossRefGoogle Scholar
8Natsuaki, N., Ohyu, K., Suzuki, T., Kobayashi, N., Hashimoto, N., and Wada, Y., ext. abstr. in the 17th Conference, Solid State Devices and Materials, Tokyo, 1985, p. 325.Google Scholar
9Liu, R., Baiocchi, F. A., Heimbrook, L. A., Kovalchick, J., Malm, D. L., Williams, D.S., and Lynch, W. T., in ULSI Science and Technology 1987, edited by Broydo, S. and Osburn, C.M. (The Electrochem. Soc., Pennington, NJ, 1987), p. 446.Google Scholar
10Probst, V., Lippens, P., hove, L. Van den, Maex, K., Schaber, H., and Keersmaecker, R. De, Proceedings of the European Solid State Device Research Conference, edited by Soncini, G. and Calzolari, P. U., Bologna, Italy, 397 (1987).Google Scholar
11Zheng, L.R., Hung, L.S., and Mayer, J.W., J. Appl. Phys. 54, 1505 (1985).CrossRefGoogle Scholar
12Wittmer, M. and Tu, K.N., Phys. Rev. B 29, 2010 (1984).CrossRefGoogle Scholar
13Lew, P.L. and Helms, C.R., J. Appl. Phys. 56, 3418 (1984).CrossRefGoogle Scholar
14Maex, K., Ph.D. Thesis, Katholieke Universiteit Leuven, Leuven, Belgium, 1987.Google Scholar
15Beyers, R., Kim, K.B., and Sinclair, R., J. Appl. Phys. 61, 2195 (1987).CrossRefGoogle Scholar
16Beyers, R., Sinclair, R., and Thomas, M. E., J. Vac. Sci. Techn. B2, 781 (1984).CrossRefGoogle Scholar
17Boom, R., Boer, R. F. De, and Miedema, A. R., J. Less-Common Met. 45, 237 (1976).CrossRefGoogle Scholar
18Boom, R., Boer, R. F. De, and Miedema, A. R., J. Less-Common Met. 46, 271 (1976).CrossRefGoogle Scholar
19Barin, I. and Knacke, O., Thermochemical Properties of Inorganic Substances (Springer, Berlin), 1973 and 1977.Google Scholar
20Kaufman, L., CALPHAD 3, 45 (1979).CrossRefGoogle Scholar
21Murray, J. L., Liao, P. K., and Spear, K. E., Bull, of Alloy Phase Diagrams 7, 550 (1986).CrossRefGoogle Scholar
22Dirckx, R. R. and Spear, K. E., CALPHAD 11, 167 (1987).CrossRefGoogle Scholar
23Kubaschewski, O. and Alcock, C.B., Metallurgical Thermochemistry (Pergamon Press, New York, 1978).Google Scholar
24Oesinski, R. W. and Abbaschian, G. J., Bull, of Alloy Phase Diagrams 6, 254 (1985).CrossRefGoogle Scholar
25Belousov, U.I., Russ. J. Phys. Chemistry 53, 1266 (1979).Google Scholar
26Gas, P., Deline, V., d'Heurle, F. M., Michel, A., and Scilla, G., J. Appl. Phys. 60, 1634 (1986).CrossRefGoogle Scholar
27Zheng, L.R., Hung, L.S., Mayer, J.W., and Choi, K.W., Nucl. Instr. and Methods Phys. Res. 7-8, 413 (1985).CrossRefGoogle Scholar
28Beyers, R., Coulman, D., and Merchant, P., J. Appl. Phys. 61, 5110 (1987).CrossRefGoogle Scholar
29Torres, J., Oberlin, J. C., Bomchill, G., Perio, A., Levy, D., Saulnier, A., Ponpon, J.P., and Stuck, R., Proceedings of the European Solid State Research Conference (ESSDERC), Bologna, Italy, edited by Soncini, G. and Calzolari, P.U. (1987), p. 197.Google Scholar
30hove, L. Van den, Ph.D. Thesis, Katholieke Universiteit Leuven, Leu-ven, Belgium, 1988.Google Scholar
31Tabasky, M., Bulat, E. S., Ditchek, B. M., Sullivan, M. A., and Shatas, S., Materials Research Society Proceedings, edited by Sedgwick, T. O., Seidel, T. E., and Tsaur, B.Y. (Materials Research Society, Pittsburgh, PA, 1985), Vol. 52, p. 371.Google Scholar
32d'Heurle, F.M., Petersson, C. S., and Tsai, M. Y., J. Appl. Phys. 51, 5976 (1980).CrossRefGoogle Scholar
33Maex, K., hove, L. Van den, Keersmaecker, R. F. De, Oberlin, J. C., Perio, A., Torres, J., Bomchil, G., and Weg, W. van der, in Le Vide et les Couches Minces (Société Française du Vide, 1987), Vol. 42, No. 236, p. 95.Google Scholar
34Probst, V., Schaber, H., Lippens, P., hove, L. Van den, and Keersmaecker, R. De, Appl. Phys. Lett. 52, 1803 (1988).CrossRefGoogle Scholar
35hove, L. Van den, Lippens, P., Maex, K., Hobbs, L., Keersmaecker, R. De, Probst, V., and Schaber, H., to be published in Appl. Surface Science.Google Scholar
36Maex, K., Ghosh, G., Delaey, L., and Keersmaecker, R. De, to be published in Appl. Surface Science.Google Scholar