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“Square” hysteresis loops in phase-switching Nb-doped lead zirconate stannate titanate thin films

Published online by Cambridge University Press:  03 March 2011

C.J. Gaskey
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802–4801
K.R. Udayakumar
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802–4801
H.D. Chen
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802–4801
I.E. Cross
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802–4801
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Abstract

Niobium-doped lead zirconate stannate titanate thin films have been prepared by a modified sol-gel spin on technique, utilizing the hydrolysis-resistant precursor lead acetylacetonate. Films of compositions in the antiferroelectric tetragonal and antiferroelectric orthorhombic phases were prepared and phase-switched with the application of appropriate electric fields. A distinctly “square” hysteresis response was observed in a low titanium, low tin, orthorhombic composition, with a maximum polarization, Pmax, of 40 μC/cm2 and switching field values of Ef = 175 kV/cm and Ea = 75 kV/cm, while varying degrees of squareness, along with lower polarizations and switching fields, were observed in the higher tin, tetragonal compositions. Electric field-induced strains of up to 0.33% have been measured in the orthorhombic composition, with tunable electromechanical coefficients. Film properties showed only slight variation with electrode size over a range of diameters from 0.8 mm to 6.35 mm; large area electrodes are vital for practical actuator and sensor devices. With a capacitance density of 30–35 μF/cm2, films of the orthorhombic composition are promising as power plane decoupling capacitors in multichip modules.

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Articles
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Shirane, G., Sawaguchi, E., and Takagi, Y., Phys. Rev. 84 (3), 476 (1957).CrossRefGoogle Scholar
2Jaffe, B., Proc. IRE 49, 1264 (1961).CrossRefGoogle Scholar
3Berlincourt, D., Krueger, H. H. A., and Jaffe, B., J. Phys. Chem. Solids 23, 659 (1964).CrossRefGoogle Scholar
4Berlincourt, D., IEEE Trans. Sonics Ultrason. Ind. Eng. Chem. SU–13 (4), 116 (1966).CrossRefGoogle Scholar
5Brooks, K. G., Chen, J., Udayakumar, K. R., and Cross, L. E., J. Appl. Phys. 75 (3), 1699 (1994).CrossRefGoogle Scholar
6Brooks, K.G., Chen, J., Udayakumar, K. R., and Cross, L.E., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 443.Google Scholar
7Pan, W.Y., Zhang, Q.M., Bhalla, A.S., and Cross, L.E., J. Am. Ceram. Soc. 72, 571 (1989).CrossRefGoogle Scholar
8Selvaraj, U., Brooks, K.G., Prasad Rao, A.V., Komarneni, S., Roy, R., and Cross, L. E., J. Am. Ceram. Soc. 76 (6), 1441 (1993).CrossRefGoogle Scholar
9Milne, S.J. and Pike, S.H., J. Am. Ceram. Soc. 74 (6), 1407 (1991).CrossRefGoogle Scholar
10Udayakumar, K. R., Chen, J., and Cross, L. E., Proc. 7th Int. Symp. Appl. Ferroelectrics, 741 (1990).Google Scholar
11Shimizu, Y., Udayakumar, K.R., and Cross, L.E., J. Am. Ceram. Soc. 74 (12), 323 (1991).CrossRefGoogle Scholar
12Gerson, R. and Marshall, T.C., J. Appl. Phys. 30 (11), 1650 (1959).CrossRefGoogle Scholar