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Sputter-deposition and characterization of paramelaconite

Published online by Cambridge University Press:  31 January 2011

K. J. Blobaum ,
D. Van Heerden ,
A. J. Wagner ,
D. H. Fairbrother  and
T. P. Weihs
K. J. Blobaum
Affiliation:
Department of Materials Science and Engineering, Johns Hopkins University, 3400 N. Charles St., Baltimore, Maryland 21218
D. Van Heerden
Affiliation:
Department of Materials Science and Engineering, Johns Hopkins University, 3400 N. Charles St., Baltimore, Maryland 21218
A. J. Wagner
Affiliation:
Department of Chemistry, Johns Hopkins University, 3400 N. Charles St., Baltimore, Maryland 21218
D. H. Fairbrother
Affiliation:
Department of Chemistry, Johns Hopkins University, 3400 N. Charles St., Baltimore, Maryland 21218
T. P. Weihs
Affiliation:
Department of Materials Science and Engineering, Johns Hopkins University, 3400 N. Charles St., Baltimore, Maryland 21218
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Abstract

While processing techniques for deposition of CuOx/Al multilayer foils were being developed, a method for synthesizing paramelaconite (Cu4O3) was serendipitously discovered. These paramelaconite films were successfully synthesized by sputter-deposition from a CuO target. Milligram quantities of uncontaminated material were produced enabling new studies of the morphology, stoichiometry, and thermodynamics of this unique copper oxide. At moderate temperatures, equiaxed paramelaconite grains deposited with a strong out-of-plane texture; at lower temperatures the paramelaconite grains showed no texture but were columnar in geometry. X-ray photoelectron spectroscopy showed that the as-deposited Cu4O3 had a nonstoichiometric Cu:O ratio of 1.7:1; the ratio of Cu+ to Cu2+ was 1.8:1. On heating, this phase decomposed into CuO and Cu2O at temperatures ranging from 400 to 530 °C. Using differential scanning calorimetry, the heat of formation and Gibbs free energy for Cu4O3 were estimated to be −453 and −279 kJ/mol, respectively. On the basis of these calculations and our observations, we confirmed that Cu4O3 is a metastable phase.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 7 , July 2003 , pp. 1535 - 1542
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1.Datta, N. and Jeffery, J.W., Acta Crystallogr. B 34, 22 (1978).CrossRefGoogle Scholar
2.Long, N.J. and Petford-Long, A.K., Ultramicroscopy 20, 151 (1986).Google Scholar
3.Moiseev, G.K. and Vatolin, N.A., Russ. J. Phys. Chem. (Transl. of Zh. Fiz. Khim.) 72, 1398 (1998).Google Scholar
4.Weihs, T.P., in Handbook of Thin Film Process Technology, edited by Glocker, D.A. and Shah, S.I. (IOP Publishers, Philadelphia, PA, 1997), p. F7:1.Google Scholar
5.Gavens, A.J., D. Van Heerden, Mann, A.B., Reiss, M.E., and Weihs, T.P., J. Appl. Phys. 87, 1255 (2000).Google Scholar
6.Blobaum, K.J., Reiss, M.E., and Weihs, T.P., J. Appl. Phys. (2002, submitted for publication).Google Scholar
7.Barbee, T.W. and Weihs, T.P., U.S. Patent No. 5 538 795, (1996).Google Scholar
8.Weihs, T.P., Reiss, M.E., Knio, O.M., Heerden, D.V., Hufnagel, T.C., and Feldmesser, H.S., U.S. Patent (2001, submitted).Google Scholar
9.Makowiecki, D.M. and Bionta, R.M., U.S. Patent No. 5 381 944, (1995).Google Scholar
10.Kaito, C., Nakata, Y., Saito, Y., Naiki, T., and Fujita, K., J. Cryst. Growth 74, 469 (1986).Google Scholar
11.Richthofen, A. von, Domnick, R., and Cremer, R., Fresenius' J. Anal. Chem. 358, 312 (1997).Google Scholar
12.Li, J., Vizkelethy, G., Revesz, P., Mayer, J.W., and Tu, K.N., J. Appl. Phys. 69, 1020 (1991).Google Scholar
13.Morgan, P.E.D., Partin, D.E., Chamberland, B.L., and O'Keeffe, M., J. Solid State Chem. 121, 33 (1996).Google Scholar
14.Bravman, J.C. and Sinclair, R., J. Electron Microsc. Tech. 1, 53 (1984).Google Scholar
15.Wall, M.A., Microsc. Res. Tech. 27, 262 (1994).Google Scholar
16.Fairbrother, D.H., Roberts, J.G., Rizzi, S., and Somorjai, G.A., Langmuir 13, 2090 (1997).Google Scholar
17.Riviére, J.C., Surface Analytical Techniques (Clarendon Press, Oxford, U.K., 1990).Google Scholar
18.Warren, B.E., X-Ray Diffraction (Dover Publications, New York, 1969).Google Scholar
19.Michaelsen, C., Barmak, K., and Weihs, T.P., J. Phys. D: Appl. Phys. 30, 3167 (1997).Google Scholar
20.Harding, J.H., Harris, D.J., and Parker, S.C., Phys. Rev. B 60, 2740 (1999).Google Scholar
21.Ohring, M., The Materials Science of Thin Films (Academic Press, Boston, MA, 1992).Google Scholar
22.Frost, D.C., Ishitani, A., and McDowell, C.A., Mol. Phys. 24, 861 (1972).CrossRefGoogle Scholar
23.Chopra, K.L., Thin Film Phenomena (McGraw-Hill, New York, 1969).Google Scholar