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Space-charge-limited-current conduction in heteroepitaxial 3C–SiC (111) on TiC (111)

Published online by Cambridge University Press:  31 January 2011

S.H. Tan ,
C.P. Beetz Jr. ,
J.M. Carulli Jr. ,
B.Y. Lin  and
D.F. Cummings
S.H. Tan
Affiliation:
Advanced Technology Materials, Inc., Danbury, Connecticut 06810
C.P. Beetz Jr.
Affiliation:
Advanced Technology Materials, Inc., Danbury, Connecticut 06810
J.M. Carulli Jr.
Affiliation:
Advanced Technology Materials, Inc., Danbury, Connecticut 06810
B.Y. Lin
Affiliation:
Advanced Technology Materials, Inc., Danbury, Connecticut 06810
D.F. Cummings
Affiliation:
Advanced Technology Materials, Inc., Danbury, Connecticut 06810
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Abstract

Unintentionally doped 3C–SiC (111) films were grown on TiC (111) substrates. The films were characterized by electrical measurements employing Pt Schottky contacts, optical microscopy, and transmission electron microscopy (TEM). The observed current-voltage (I-V) characteristics appear to be dominated by space-charge-limited-current (SCLC) conduction in the films. Analysis of the I-V characteristics has resulted in information pertaining to the electrically active defects in the films. These active defects are believed to be associated with stacking faults and point defects present in the films and contribute to traps at ∼0.656 eV below the conduction band edge. The concentration of traps was found to vary with film thickness and surface morphology.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 7 , July 1992 , pp. 1816 - 1821
Copyright
Copyright © Materials Research Society 1992

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