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Solution-processed lanthanum zirconium oxide as a barrier layer for high Ic-coated conductors

Published online by Cambridge University Press:  01 April 2006

Srivatsan Sathyamurthy ,
Mariappan Paranthaman ,
Lee Heatherly ,
Patrick M. Martin ,
E.D. Specht ,
Amit Goyal ,
Thomas Kodenkandath ,
Xiaoping Li  and
Martin W. Rupich
Srivatsan Sathyamurthy*
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Mariappan Paranthaman
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Lee Heatherly
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Patrick M. Martin
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
E.D. Specht
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Amit Goyal
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Thomas Kodenkandath
Affiliation:
American Superconductor Corporation, Westborough, Massachusetts 01581
Xiaoping Li
Affiliation:
American Superconductor Corporation, Westborough, Massachusetts 01581
Martin W. Rupich
Affiliation:
American Superconductor Corporation, Westborough, Massachusetts 01581
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

High-quality lanthanum zirconium oxide (La2Zr2O7 or LZO) films have been deposited and processed on Ni–W substrates using a sol-gel processing approach. It has been demonstrated that crack-free coatings with thicknesses up to 100 nm can be processed in a single step, while thicker coatings (200–225 nm) were processed using a multiple coating and annealing process. Using simulated metalorganic deposition (MOD)-YBa2Cu3O7−δ (YBCO) processing conditions, the barrier properties of the sol-gel LZO coating with a thickness of 120 nm were found to be comparable to that of the standard 3-layer buffer stack deposited using physical vapor deposition. Secondary ion mass spectroscopy depth profile analysis of LZO films annealed in oxygen-18 shows that LZO effectively stops the diffusion of Ni within the first 80–100 nm. Using MOD processes, a CeO2 cap layer and superconducting YBCO layer were deposited on sol-gel LZO/Ni–W. For the first time, using such an all-solution conductor architecture, a critical current (Ic) of 140 A/cm with a corresponding critical current density (Jc) of 1.75 MA/cm2 has been demonstrated. Using a very thin Y2O3 seed layer (∼10 nm) deposited by electron beam evaporation; improved texture quality in the LZO layers has been demonstrated. The performance of the LZO deposited on these samples was evaluated using a sputtered CeO2 cap layer and MOD YBCO layer. Critical currents of up to 255 A/cm (3.2 MA/cm2) with 0.8-μm-thick YBCO films have been demonstrated, comparable to the performance of films grown using physical vapor deposited yttria stabilized zirconia as a barrier layer. Similar experiments using an MOD-CeO2 cap layer and MOD-YBCO layer yielded critical currents of 200 A/cm (2.5 MA/cm2) with 0.8-μm-thick YBCO films.

Keywords

EpitaxyMetalorganic depositionSol-gel
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 4 , April 2006 , pp. 910 - 914
Copyright
Copyright © Materials Research Society 2006

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References

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