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Solution chemistry effects on cracking and damage evolution during chemical-mechanical planarization

Published online by Cambridge University Press:  31 January 2011

Markus D. Ong ,
Patrick Leduc ,
Daniel W. McKenzie ,
Thierry Farjot ,
Gerard Passemard ,
Sylvain Maitrejean  and
Reinhold H. Dauskardt
Markus D. Ong
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Patrick Leduc
Affiliation:
Commissariat à l'Énergie Atomique - LETI (CEA-LETI), Minatec, 38054 Grenoble Cedex 9, France
Daniel W. McKenzie
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Thierry Farjot
Affiliation:
Commissariat à l'Énergie Atomique - LETI (CEA-LETI), Minatec, 38054 Grenoble Cedex 9, France
Gerard Passemard
Affiliation:
STMicroelectronics, 38926 Crolles Cedex, France
Sylvain Maitrejean
Affiliation:
Commissariat à l'Énergie Atomique - LETI (CEA-LETI), Minatec, 38054 Grenoble Cedex 9, France
Reinhold H. Dauskardt*
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We describe progress in understanding the effect of simulated chemical-mechanical planarization (CMP) slurry chemistry on the evolution of defects and formation of damage that occurs during CMP processing. Specifically, we demonstrate the significant effect of aqueous solution chemistry on accelerating crack growth in porous methylsilsesquioxane (MSSQ) films. In addition, we show that the same aqueous solutions can diffuse rapidly into the highly hydrophobic nanoporous MSSQ films containing interconnected porosity. Such diffusion has deleterious effects on both dielectric properties and the acceleration of defect growth rates. Crack propagation rates were measured in several CMP solutions, and the resulting crack growth behavior was used to qualitatively predict the extent of damage during CMP. These predictions are compared with damage formed during actual CMP processes in identical chemistries. We discuss the effects of both the high and low crack growth rate regimes, including the presence of a crack growth threshold, on the predicted CMP damage. Finally, implications for improved CMP processing were considered.

Keywords

AdhesionFractureChemical reaction
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 10 , October 2010 , pp. 1904 - 1909
Copyright
Copyright © Materials Research Society 2010

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References

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