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Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon

Published online by Cambridge University Press:  03 March 2011

W. Sinke ,
F. W. Saris ,
J. C. Barbour  and
J. W. Mayer
W. Sinke
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
F. W. Saris
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
J. C. Barbour
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
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Abstract

Fine-grain polycrystalline silicon has been produced by low-energy pulsed-laser irradiation of copper-implanted amorphous silicon. This fine-grained material can be regrown epitaxially on the (100) substrate using thermal annealing at temperatures ranging from 800°–1000 °C.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 1 , February 1986 , pp. 155 - 161
Copyright
Copyright © Materials Research Society 1986

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References

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