Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-22T21:27:02.907Z Has data issue: false hasContentIssue false

Sol-gel processing of strontium-barium niobate ferroelectric thin film

Published online by Cambridge University Press:  31 January 2011

Ren Xu
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, California 90024
Yuhuan Xu
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, California 90024
Ching Jih Chen
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, California 90024
John D. Mackenzie
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, California 90024
Get access

Abstract

Ferroelectric thin film of strontium-barium niobate was successfully fabricated by the sol-gel technique. The films were made on several types of substrate, including quartz, single crystal silicon wafer, and glass slides. The processing temperature was as low as 700 °C. The film obtained with thickness of 3000 Å was dense, transparent, and showed excellent ferroelectricity.

Type
Materials Communications
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Xu, Y. H., Ferroelectric and Piezoelectric Materials (Science Press, Beijing, 1978).Google Scholar
2Nomura, Sadao, Kojima, Hiroomi, Hattori, Yasuhiro, and Kotsuka, Hirotsugu, Jpn. J. Appl. Phys. 13, 1185 (1974).CrossRefGoogle Scholar
3Glass, A.M., Appl. Phys. Lett. 13, 147 (1968).CrossRefGoogle Scholar
4Micheron, F. and Trotier, J. C., Ferroelectrics 8, 441 (1974).CrossRefGoogle Scholar
5Seglins, Yanis, Krumins, Andris, Ozols, Sndris, and Odoulov, Serguej, Ferroelectrics 75, 317 (1987).CrossRefGoogle Scholar
6Ballman, A. A. and Brown, H. J., Cryst. Growth 1, 311 (1967).CrossRefGoogle Scholar
7Glass, A. M., Appl. Phys., 40, 4699 (1969); erratum 41, 2268 (1970).CrossRefGoogle Scholar
8Sawyer, C. B. and Tower, C. H., Phys. Rev. 35, 269 (1930).CrossRefGoogle Scholar
9Xu, Y. H., Chen, C. J., Xu, R., and Mackenzie, J. D., to be published in J. Appl. Phys., March 15 (1990).Google Scholar