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Sol-gel derived Ba(Mg1/3Ta2/3)O3 thin films: Preparation and structure

Published online by Cambridge University Press:  31 January 2011

Ji Zhou ,
Qing-Xin Su ,
K. M. Moulding  and
D. J. Barber
Ji Zhou*
Affiliation:
Department of Materials Science & Engineering, Tsinghua University, Beijing 100084, People's Republic of China
Qing-Xin Su
Affiliation:
Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
K. M. Moulding
Affiliation:
Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
D. J. Barber
Affiliation:
Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
*
a)Address all correspondence to this author.
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Abstract

Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 3 , March 1997 , pp. 596 - 599
Copyright
Copyright © Materials Research Society 1997

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