Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-22T21:38:57.571Z Has data issue: false hasContentIssue false
  • English
  • Français

Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films

Published online by Cambridge University Press:  03 March 2011

Jiming Zhang ,
Gregory T. Stauf ,
Robin Gardiner ,
Peter Van Buskirk  and
John Steinbeck
Jiming Zhang
Affiliation:
Advanced Technology Materials, Inc., Danbury, Connecticut 06810
Gregory T. Stauf
Affiliation:
Advanced Technology Materials, Inc., Danbury, Connecticut 06810
Robin Gardiner
Affiliation:
Advanced Technology Materials, Inc., Danbury, Connecticut 06810
Peter Van Buskirk
Affiliation:
Advanced Technology Materials, Inc., Danbury, Connecticut 06810
John Steinbeck
Affiliation:
Advanced Technology Materials, Inc., Danbury, Connecticut 06810
Get access

Abstract

MgAl2O4 films have been grown epitaxially on both Si(100) and MgO(100) by a novel single source metal-organic chemical vapor deposition (MOCVD) process. A single molecular source reagent [magnesium dialuminum isopropoxide, MgAl2(OC3H7)8] having the desired Mg: Al ratio was dissolved in a liquid solution and flash-vaporized into the reactor. Both thermal and plasma-enhanced MOCVD were used to grow epitaxial MgAl2O4 thin films. The Mg: Al ratio in the deposited films was the same as that of the starting compound (Mg: Al = 1:2) over a wide range of deposition conditions. The deposition temperature required for the formation of crystalline spinel was found to be significantly reduced and crystallinity was much improved on Si by using a remote plasma-enhanced MOCVD process. The epitaxial nature of the MgAl2O4 films was established by x-ray pole figure analysis.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 9 , Issue 6 , June 1994 , pp. 1333 - 1336
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Alper, A. M., McNally, R.N., Ribbe, P. G., and Doman, R. C., J. Am. Ceram. Soc. 45, 264 (1962).Google Scholar
2Tropf, W. J. and Thomas, M. E., Handbook of Optical Constants of Solids (Academic Press, New York, 1991), p. 883.Google Scholar
3Hartnett, T. M. and Gentilman, R. L., Proc. SPIE 505, 15 (1984).Google Scholar
4Woosley, J. D., Wood, C., Sonder, E., and Weeks, R. A., Phys. Rev. B 22, 1065 (1980).Google Scholar
5Wang, C. C., J. Appl. Phys. 40, 3433 (1969).CrossRefGoogle Scholar
6Ogata, H., Hanafusa, H., and Yoneda, K., J. Cryst. Growth 95, 500 (1989).Google Scholar
7Maruyama, S., J. Appl. Phys. 24, 363 (1985).Google Scholar
8Matsubara, S., Miura, S., Miyasaka, Y., and Shohata, N., J. Appl. Phys. 66, 5826 (1989).Google Scholar
9Hwang, D. M., Remesh, R., Chen, C. Y., Wu, X. D., Inam, A., Hegde, M. S., Wilkens, B., Chang, C. C., Nazar, L., Venkatesan, T., Matsubara, S., Miura, S., Miyasaka, Y., and Shohata, N., J. Appl. Phys. 68, 1772 (1990).Google Scholar
10Zhang, J., Gardiner, R. A., Kirlin, P. S., Boerstler, R. W., and Steinbeck, J., Appl. Phys. Lett. 61, 2884 (1992).CrossRefGoogle Scholar
11Van Buskirk, P., Gardiner, R. A., and Kirlin, P. S., J. Vac. Sci. Technol. A 10, 1578 (1992).Google Scholar
12See, for example, Nguyen, V. S., in Handbook of Thin-Film Deposition Processes and Techniques, edited by Schuegral, K. K. (Noyes Publications, Park Ridge, NJ, 1988).Google Scholar
13Lucovsky, G. and Tsu, D. V., J. Vac. Sci. Technol. A 4, 681 (1986).Google Scholar