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Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films

Published online by Cambridge University Press:  31 January 2011

R. C. Cammarata ,
C. V. Thompson ,
C. Hayzelden  and
K. N. Tu
R. C. Cammarata
Affiliation:
Department of Materials Science and Technology, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
C. V. Thompson
Affiliation:
Department of Materials Science and Technology, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
C. Hayzelden
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
K. N. Tu
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

The nucleation and growth kinetics of NiSi2 precipitation in amorphous silicon thin films ion implanted with nickel was investigated using scanning transmission electron microscopy. It was found that the nucleation rate could be approximately described by a delta function at time t = 0 when the films were annealed between 325 and 400 °C. The growth kinetics of the precipitates at these temperatures were described by r ∝ tn, where r was the average radius and n was about 1/3. This behavior is consistent with models for growth of three-dimensional particles in a two-dimensional diffusion field. It was also found that the implanted amorphous films displayed an enhanced rate of single crystal silicon formation, apparently catalyzed by migrating silicide precipitates.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 10 , October 1990 , pp. 2133 - 2138
Copyright
Copyright © Materials Research Society 1990

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References

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