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A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

Published online by Cambridge University Press:  31 January 2011

L. Fayette ,
B. Marcus ,
M. Mermoux ,
N. Rosman ,
L. Abello  and
G. Lucazeau
L. Fayette
Affiliation:
Laboratoire d'Electrochimie et de Physicochimie des Matériaux et Interfaces (UMR 5631 INPG-CNRS, associé à l'UJF), Domaine universitaire, BP 75.38402 Saint Martin D'Heres Cedex, France
B. Marcus
Affiliation:
Laboratoire d'Electrochimie et de Physicochimie des Matériaux et Interfaces (UMR 5631 INPG-CNRS, associé à l'UJF), Domaine universitaire, BP 75.38402 Saint Martin D'Heres Cedex, France
M. Mermoux
Affiliation:
Laboratoire d'Electrochimie et de Physicochimie des Matériaux et Interfaces (UMR 5631 INPG-CNRS, associé à l'UJF), Domaine universitaire, BP 75.38402 Saint Martin D'Heres Cedex, France
N. Rosman
Affiliation:
Laboratoire d'Electrochimie et de Physicochimie des Matériaux et Interfaces (UMR 5631 INPG-CNRS, associé à l'UJF), Domaine universitaire, BP 75.38402 Saint Martin D'Heres Cedex, France
L. Abello
Affiliation:
Laboratoire d'Electrochimie et de Physicochimie des Matériaux et Interfaces (UMR 5631 INPG-CNRS, associé à l'UJF), Domaine universitaire, BP 75.38402 Saint Martin D'Heres Cedex, France
G. Lucazeau
Affiliation:
Laboratoire d'Electrochimie et de Physicochimie des Matériaux et Interfaces (UMR 5631 INPG-CNRS, associé à l'UJF), Domaine universitaire, BP 75.38402 Saint Martin D'Heres Cedex, France
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Abstract

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 10 , October 1997 , pp. 2686 - 2698
Copyright
Copyright © Materials Research Society 1997

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