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Semiempirical method for calculation of secondary electron emission coefficients of insulating materials using their spectra of x-ray photoelectron spectroscopy

Published online by Cambridge University Press:  31 January 2011

Tae Wook Heo ,
Sung Hwan Moon ,
Sun Young Park ,
Jae Hyuk Kim  and
Hyeong Joon Kim
Tae Wook Heo
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Sung Hwan Moon
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea; and Samsung SDI Corporate R&D Center, Gongse-dong, Kiheung-gu, Youngin-City, Gyenggi Province 446-577, Korea
Sun Young Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Jae Hyuk Kim*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea; and Samsung SDI Corporate R&D Center, Gongse-dong, Kiheung-gu, Youngin-City, Gyenggi Province 446-577, Korea
Hyeong Joon Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea; and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The importance of the secondary electron emission of the protective layer in the alternating current plasma display panels is widely known. However, the difficulty in measuring the secondary electron emission coefficients (γ) of insulating materials has hampered efforts to obtain accurate estimates of their values. To overcome the difficulty of direct measurement, we devised a calculating γ using the spectra of x-ray photoelectron spectroscopy (XPS) and a well-defined theory. The XPS spectra of the valence and core bands of MgO, Al2O3, and Y2O3 films, which were deposited by e-beam evaporation, were measured. Calculations of the γ values were conducted for the case when gas ions such as He, Ne, Ar, and Xe slowly approach the solid surface.

Keywords

X-ray photoelectron spectroscopy (XPS)Insulator
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 11 , November 2007 , pp. 3178 - 3185
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1Motoyama, Y., Matsuzaki, H.Murakami, H.: A study of the secondary electron yield γ of insulator cathodes for plasma display panels. IEEE Trans. Electron Devices 48, 1568 2001CrossRefGoogle Scholar
2Matulevich, Y.T.van Emmichoven, P.A. Zeijlmans: Electron emission from low-energy Xe+ ions interacting with a MgO thin film deposited on a Mo substrate. Phys. Rev. B 69, 245414 2004CrossRefGoogle Scholar
3Kim, D.H., Kim, S.H., Choi, I.S.Lee, J. H.: Secondary electron emission coefficient of pure and Cs-doped MgO for low energy noble gas ions. SID 06 Digest,1392 2006CrossRefGoogle Scholar
4Hagstrum, H.D.: Theory of Auger ejection of electrons from metal by ions. Phys. Rev. 96, 336 1954CrossRefGoogle Scholar
5Hagstrum, H.D.: Theory of Auger neutralization of ions at the surface of a diamond-type semiconductor. Phys. Rev. 122, 83 1961CrossRefGoogle Scholar
6Feldman, L.C.Mayer, J.W.: Fundamentals of Surface and Thin Film Analysis North-Holland New York 1986 136Google Scholar
7Motoyama, Y., Hirano, Y., Ishii, K., Murakami, Y.Sato, F.: Influence of defect states on the secondary electron emission yield γ from MgO surface. J. Appl. Phys. 95, 8419 2004CrossRefGoogle Scholar
8McCaughan, D.V., Kushner, R.A.Murphy, V.T.: Ion neutralization processes at insulator surfaces and consequent impurity migration effects in SiO2 films. Phys. Rev. Lett. 30, 614 1973CrossRefGoogle Scholar
9Liboff, R.L.Introductory Quantum Mechanics 4th ed.Addison Wesley San Francisco, CA 2003 716–717Google Scholar
10Miyazaki, S.: Characterization of high-k gate dielectric/silicon interfaces. Appl. Surf. Sci. 190, 66 2002CrossRefGoogle Scholar
11Vink, T.J., Balkenende, A.R., Verbeek, R.G.F.A., van Hal, H.A.M.de Zwart, S.T.: Materials with a high secondary-electron yield for use in plasma displays. Appl. Phys. Lett. 80, 2216 2002CrossRefGoogle Scholar
12Halas, S.Durakiewicz, T.: Physical foundations of the oxide cathodes. Appl. Surf. Sci. 252, 6119 2006CrossRefGoogle Scholar
13Samsonov, G.V.The Oxide Handbook 2nd ed.IFI/Pleum New York 1982CrossRefGoogle Scholar
14Horng, R.H., Wuu, D.S., Yu, J.W.Kung, C.Y.: Effects of rapid thermal process on structural and electrical characteristics of Y2O3 thin films by r.f.-magnetron sputtering. Thin Solid Films 289, 234 1996CrossRefGoogle Scholar