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Semiconductor nanowires from oxides

Published online by Cambridge University Press:  31 January 2011

S. T. Lee ,
Y. F. Zhang ,
N. Wang ,
Y. H. Tang ,
I. Bello ,
C. S. Lee  and
Y. W. Chung
S. T. Lee*
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, The City University of Hong Kong, Hong Kong
Y. F. Zhang
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, The City University of Hong Kong, Hong Kong
N. Wang
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, The City University of Hong Kong, Hong Kong
Y. H. Tang
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, The City University of Hong Kong, Hong Kong
I. Bello
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, The City University of Hong Kong, Hong Kong
C. S. Lee
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, The City University of Hong Kong, Hong Kong
Y. W. Chung
Affiliation:
Department of Materials Science and Engineering, Northern University, Evanston, Illinois
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Highly pure, ultralong, and uniform-sized semiconductor nanowires in bulk quantity were synthesized by thermal evaporation or laser ablation of semiconductor powders mixed with oxides. Transmission electron microscopy study shows that decomposition of semiconductor suboxides and defect structures play important roles in enhancing the formation and growth of high-quality nanowires. A new growth mechanism is proposed on the basis of microstructure and different morphologies of the nanowires observed.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 12 , December 1999 , pp. 4503 - 4507
Copyright
Copyright © Materials Research Society 1999

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References

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