Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-20T00:06:43.102Z Has data issue: false hasContentIssue false
  • English
  • Français

Self-limited growth of InAs at 480 °C

Published online by Cambridge University Press:  03 March 2011

D. Jung  and
S.M. Bedair
D. Jung
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
S.M. Bedair
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
Get access

Abstract

Self-limited growth of InAs at 480 °C is achieved by a rotating substrate method with a specially designed susceptor. The residual precursors and the boundary layer are removed by the mechanical shear-off. Prevention of the precursor carryover and the gas-phase decomposition are thought to result in the self-limited growth of InAs at temperatures as high as 480 °C.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 9 , Issue 12 , December 1994 , pp. 3022 - 3024
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Yao, T., Jpn. J. Appl. Phys. 22, L680 (1983).CrossRefGoogle Scholar
2McDermott, B.T., El-Masry, N. A., Tischler, M. A., and Bedair, S. M., Appl. Phys. Lett. 51, 1830 (1987).Google Scholar
3Tischler, M. A. and Bedair, S. M., Atomic Layer Epitaxy, edited by Suntola, T. and Simpson, M. (Blackie, Glasgow and London, UK, 1990), Chap. 4.Google Scholar
4Jeong, W. G., Menu, E. P., and Dapkus, P. D., Appl. Phys. Lett. 55, 244 (1989).CrossRefGoogle Scholar
5Sakuma, Y., Ozeki, M., and Nakajima, K., J. Cryst. Growth 130, 147 (1993).CrossRefGoogle Scholar
6Colas, E., Bhat, R., Skromme, B. J., and Nihous, G. C., Appl. Phys. Lett. 55, 2769 (1989).CrossRefGoogle Scholar
7Tsang, W. T., Appl. Phys. Lett. 45, 1234 (1984).CrossRefGoogle Scholar
8Nishizawa, J. and Kurabayashi, T., J. Cryst. Growth 93, 98 (1988).CrossRefGoogle Scholar