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Self-limited growth of InAs at 480 °C

Published online by Cambridge University Press:  03 March 2011

D. Jung  and
S.M. Bedair
D. Jung
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
S.M. Bedair
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
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Abstract

Self-limited growth of InAs at 480 °C is achieved by a rotating substrate method with a specially designed susceptor. The residual precursors and the boundary layer are removed by the mechanical shear-off. Prevention of the precursor carryover and the gas-phase decomposition are thought to result in the self-limited growth of InAs at temperatures as high as 480 °C.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 9 , Issue 12 , December 1994 , pp. 3022 - 3024
Copyright
Copyright © Materials Research Society 1994

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References

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