Published online by Cambridge University Press: 11 May 2011
Lateral ZnO nanowires (NWs) were selectively grown from the edge of a SiO2/Si–Al2O3–SiO2/Si multilayer structure for potential integration into devices using Si processing technology. Microstructural studies demonstrate a two-step growth process in which the tip region, with a diameter of ~10 nm, rapidly grew from the Al2O3 surface and, later, a base growth with a diameter of ~22 nm overgrew the existing narrow ZnO NW, halting further tip growth. Kinetics studies showed that surface diffusion on the alumina seed surface determined ZnO NW growth rate.
Present address: Metallurgical and Materials Engineering, Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, Alabama 35487