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Selective area heteroepitaxy of nano-AlGaN ultraviolet excitation sources for biofluorescence application

Published online by Cambridge University Press:  03 March 2011

Vibhu Jindal ,
James R. Grandusky ,
Neeraj Tripathi ,
Fatemeh Shahedipour-Sandvik ,
Steven LeBoeuf ,
Joleyn Balch  and
Todd Tolliver
Vibhu Jindal*
Affiliation:
College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203
James R. Grandusky
Affiliation:
College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203
Neeraj Tripathi
Affiliation:
College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203
Fatemeh Shahedipour-Sandvik
Affiliation:
College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203
Steven LeBoeuf
Affiliation:
General Electric, Global Research Center, Niskayuna, New York 12309
Joleyn Balch
Affiliation:
General Electric, Global Research Center, Niskayuna, New York 12309
Todd Tolliver
Affiliation:
General Electric, Global Research Center, Niskayuna, New York 12309
*
a) Address all correspondence to this author. e-mail: [email protected] This paper was selected as the Outstanding Meeting Paper for the 2006 MRS Spring Meeting Symposium DD Proceedings, Vol. 916.
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Abstract

We report on the selective area heteroepitaxy and facet evolution of AlGaN nanostructures on GaN/sapphire substrate using various mask materials. We also report on the challenges associated with selection of an appropriate mask material for selective area heteroepitaxy of AlGaN with varying Al composition. The shape and the growth rate of the nanostructures are observed to be greatly affected by the mask material. The evolution of the AlGaN nanostructures and Al incorporation were studied exhaustively as a function of growth parameters including temperature, pressure, NH3 flow, total alkyl flow, and TMAl/(TMAl+TMGa) ratio. The growth rate of nanostructures was reduced drastically when higher Al percentage AlGaN nanostructures were grown. The growth rates were increased for higher Al percentage AlGaN using a surfactant, which resulted in a high-quality pyramidal structure. As indicated by high-resolution x-ray diffraction and cathodoluminescence spectroscopy, the composition of Al in the AlGaN nanostructure is significantly different from that of a thin film grown under the same growth conditions.

Keywords

Chemical vapor deposition (CVD)III-VNanostructure
Type
Outstanding Meeting Papers:Review
Information
Journal of Materials Research , Volume 22 , Issue 4 , April 2007 , pp. 838 - 844
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1Gherasimova, M., Su, J., Cui, G., Ren, Z-Y., Jeon, S-R., Han, J., He, Y., Song, Y-K., Nurmikko, A.V., Ciuparu, D., and Pfefferle, L.: A nanocluster route to zero- and one-dimensional quantum structures by MOCVD. Phys. Status Solidi C 2, 2361 (2005).CrossRefGoogle Scholar
2Qian, F., Li, Y., Gradečak, S., Wang, D., Barrelet, C.J., and Lieber, C.M.: Gallium nitride-based nanowire radial heterostructures for nanophotonics. Nano Lett. 4, 1975 (2004).CrossRefGoogle Scholar
3Gradečak, S., Qian, F., Li, Y., Park, H-G., and Lieber, C.M.: GaN nanowire lasers with low lasing thresholds. Appl. Phys. Lett. 87, 173111 (2005).CrossRefGoogle Scholar
4Su, J., Gherasimova, M., Cui, G., Tsukamoto, H., Han, J., Onuma, T., Kurimoto, M., Chichibu, S.F., Broadbridge, C., He, Y., and Nurmikko, A.V.: Growth of AlGaN nanowires by metalorganic chemical vapor deposition. Appl. Phys. Lett. 87, 183108 (2005).CrossRefGoogle Scholar
5Heikman, S., Keller, S., Denbaars, S.P., Mishra, U.K., Bertram, F., and Christen, J.: Non-planar selective area growth and characterization of GaN and AlGaN. Jpn. J. Appl. Phys. 42, 6276 (2003).CrossRefGoogle Scholar
6Kato, T., Honda, Y., Kawaguchi, Y., Yamaguchi, M., and Sawaki, N.: Selective growth of GaN/AlGaN microstructures by metalorganic vapor phase epitaxy. Jpn. J. Appl. Phys. 40, 1896 (2001).CrossRefGoogle Scholar
7Haramatsu, K., Nishiyama, K., Motogaito, A., Miyake, H., Iyechika, Y., and Maeda, T.: Recent progress in selective area growth and epitaxial lateral overgrowth of III-Nitrides: Effects of reactor pressure in MOVPE growth. Phys. Status. Solidi A 176, 535 (1999).3.0.CO;2-I>CrossRefGoogle Scholar
8Du, D., Srolovitz, D.J., Coltrin, M.E., and Mitchell, C.C.: Systematic prediction of kinetically limited crystal growth morphologies. Phys. Rev. Lett. 95, 155503 (2005).CrossRefGoogle ScholarPubMed
9Jiang, H.X., Lin, J.Y., Zeng, K.C., and Yang, W.: Optical resonance modes in GaN pyramid microcavities. Appl. Phys. Lett. 75, 763 (1999).CrossRefGoogle Scholar
10Bidnyk, S., Little, B.D., Cho, Y.H., Krasinski, J., Song, J.J., Yang, W., and McPherson, S.A.: Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth. Appl. Phys. Lett. 73, 2242 (1998).CrossRefGoogle Scholar
11Kondratyev, A.V., Talalaev, R.A., Lundin, W.V., Sakharov, A.V., Tsatsulnikov, A.V., Zavarin, E.E., Fomin, A.V., and Sizov, D.S.: Aluminum incorporation control in AlGaN MOVPE: Experimental and modeling study. J. Cryst. Growth 272, 420 (2004).CrossRefGoogle Scholar
12Dai, L., Liu, S.F., You, L.P., and and Qin, J.C. Zhang G.G.: Effects of in surfactant on the crystalline and photoluminescence properties of GaN nanowires. J. Phys. Condens. Matter 17, L445 (2005).CrossRefGoogle Scholar
13Keller, S., Heikman, S., Ben-Yaacov, I., Shen, L., DenBaars, S.P., and Mishra, U.K.: Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition. Appl. Phys. Lett. 79, 3449 (2001).CrossRefGoogle Scholar