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A sample preparation method for four point bend adhesion studies

Published online by Cambridge University Press:  03 March 2011

Zhenjiang Cui ,
Sure Ngo  and
Girish Dixit
Zhenjiang Cui*
Affiliation:
Applied Materials, Inc., Santa Clara, California 95054
Sure Ngo
Affiliation:
Applied Materials, Inc., Santa Clara, California 95054
Girish Dixit
Affiliation:
Applied Materials, Inc., Santa Clara, California 95054
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

A method to prepare samples for four point bend testing is reported in this paper. The traditional method of sample preparation involves time-consuming steps of sawing with a diamond saw followed by polishing with fine grit to remove the roughness of the sidewall. The new method uses cleaving along the 〈100〉 crystallographic direction, which renders smooth surfaces and eliminates the polishing steps. Load–displacement curves comparing polished versus cleaved samples show that the new technique provides improved results. Elimination of fracture-inducing defects is the primary benefit of this method, which also leads to data with tighter distributions.

Keywords

AdhesionSemiconductor
Type
Rapid Communications
Information
Journal of Materials Research , Volume 19 , Issue 5 , May 2004 , pp. 1324 - 1327
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Rickerby, D.S., A review of the methods for the measurement of coating-substrate adhesion. Surf. Coat. Technol. 36, 541 (1988).CrossRefGoogle Scholar
2Valli, J., A review of adhesion test methods for thin hard coatings. J. Vac. Sci. Technol. A 4, 3007 (1986).CrossRefGoogle Scholar
3Dauskardt, R.H., Lane, M., Ma, Q. and Krishna, N., Adhesion and debonding of multi-layer thin film structures. Engineering Fracture Mechanics 61, 141 (1998).CrossRefGoogle Scholar
4Wang, L.C. and Dauskardt, R.H. in Mechanical Properties Derived from Nanostructuring Materials , edited by Bahr, D.F., Kung, H., Moody, N.R., and Wahl, K.J. (Mater. Res. Soc. Symp. Proc. 778, Warrendale, PA, 2003), p. 227Google Scholar
5Lemonds, A.M., Kershen, K., Bennett, J., Pfeifer, K., Sun, Y.M., White, J.M. and Ekerdt, J.G., Adhesion of Cu and low-k dielectric thin films with tungsten carbide. J. Mater. Res. 17, 1320 (2002).CrossRefGoogle Scholar
6Ramanath, G., Cui, G., Ganesan, P.G., Guo, X., Ellis, A.V., Stukowski, M., Vijayamohanan, K., Doppelt, P. and Lane, M., Self-assembled subnanolayers as interfacial adhesion enhancers and diffusion barriers for integrated circuits. Appl. Phys. Lett. 83, 383 (2003).CrossRefGoogle Scholar
7Lane, M., Liniger, E.G. and Lloyd, J.R., Relationship between interfacial adhesion and electromigration in Cu metallization. J. Appl. Phys. 93, 1417 (2003).CrossRefGoogle Scholar
8Roham, S., Hardikar, K. and Woytowitz, P. in Mechanical Properties Derived from Nanostructuring Materials, edited by Bahr, D.F., Kung, H., Moody, N.R., and Wahl, K.J. (Mater. Res. Soc. Symp. Proc. 778, Warrendale, PA, 2003), p. 73.Google Scholar
9O’Brien, T.K. and Krueger, R., Analysis of flexure tests for transverse tensile strength characterization of unidirectional composites. J. Comp. Tech. Res. 25, 50 (2003).Google Scholar
10Hsueh, C.H., Devising a method to measure film adhesion through modeling. Appl. Phys. Lett. 81, 1615 (2002).CrossRefGoogle Scholar
11Litteken, C.S. and Dauskardt, R.H., Adhesion of polymer thin-films and patterned lines. Intl. J. Frac. 119, 475 (2003).CrossRefGoogle Scholar
12Chen, B., Dillard, D.A., Dillard, J.G. and Clark, R.L., Crack path selection in adhesively bonded joints: The roles of external loads and specimen geometry. Intl. J. Frac. 114, 167 (2002).CrossRefGoogle Scholar
13 G. Kloster, T. Scherban, G. Xu, J. Blaine, B. Sun, and Y. Zhou: Porosity effects on low-k dielectric film strength and interfacial adhesion. Proc. IEEE 2002 Intl. Interconnect Tech. Conf., 242 (2002).Google Scholar
14Charalambides, P.G., Lund, J., Evans, A.G. and McMeeking, R.M., A test specimen for determining the fracture resistance of bimaterial interfaces. J. Appl. Mech. 56, 77 (1989).CrossRefGoogle Scholar