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RuO2 films by metal-organic chemical vapor deposition

Published online by Cambridge University Press:  03 March 2011

Jie Si  and
Seshu B. Desu
Jie Si
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
Seshu B. Desu*
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
*
a)Author to whom all correspondence should be addressed.
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Abstract

Pure and conducting RuO2 thin films were successfully deposited on Si, SiO2/Si, and quartz substrates at temperatures as low as 550 °C by a hot wall metal-organic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)ruthenium, Ru(C5H5)2, was used as the precursor. An optimized MOCVD process for conducting RuO2 thin films was established. Film structure was dependent on MOCVD process parameters such as bubbler temperature, dilute gas flow rates, deposition temperature, and total pressure. Either pure RuO2, pure Ru, or a RuO2 + Ru mixture was obtained under different deposition conditions. As-deposited pure RuO2 films were specular, crack-free, and well adhered on the substrates. The Auger electron spectroscopy depth profile showed good composition uniformity across the bulk of the films. The MOCVD RuO2 thin films exhibited a resistivity as low as 60 μω-cm. In addition, the reflectance of RuO2 in the NIR region had a metallic character.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 10 , October 1993 , pp. 2644 - 2648
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1Kuhn, A. T. and Mortimer, C. J., J. Electrochem. Soc. 120, 231 (1973).Google Scholar
2Krusin-Elbaum, L. and Wittmer, M., J. Electrochem. Soc. 135 (10), 2610 (1988).CrossRefGoogle Scholar
3Krusin-Elbaum, L., Wittmer, M., and Yee, D. S., Appl. Phys. Lett. 50 (26), 1879 (1987).CrossRefGoogle Scholar
4Kwok, C. K., Vijay, D. P., and Desu, S. B., Proc. 4th Int. Symp. on Integrated Ferroelectrics, Monterey, CA (1992, in press).Google Scholar
5Green, M. L., Gross, M. E., Papa, L. E., Schnoes, K. J., and Brasen, D., J. Electrochem. Soc. 132 (11), 2677 (1985).CrossRefGoogle Scholar
6Jia, Q. X. and Anderson, W. A., Appl. Phys. Lett. 57 (3), 304 (1990).CrossRefGoogle Scholar
7Jia, Q. X., Shi, Z. Q., Jiao, K. L., and Anderson, W. A., Thin Solid Films 196, 29 (1991).CrossRefGoogle Scholar
8Kolawa, E., So, F. C. T, Flick, W., Zhao, X-A., Pan, E. T-S., and Nicolet, M-A., Thin Solid Films 173, 217 (1989).Google Scholar
9Belking, A., Orban, Z., and Vossen, J. L., Thin Solid Films 207, 242 (1992).Google Scholar