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Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition

Published online by Cambridge University Press:  31 January 2011

Karola Thiele ,
Sibylle Sievers ,
Christian Jooss ,
Jörg Hoffmann  and
Herbert C. Freyhardt
Karola Thiele
Affiliation:
Institut für Materialphysik, Windausweg 2, 37073 Göttingen, Germany
Sibylle Sievers
Affiliation:
Institut für Materialphysik, Windausweg 2, 37073 Göttingen, Germany
Christian Jooss
Affiliation:
Institut für Materialphysik, Windausweg 2, 37073 Göttingen, Germany
Jörg Hoffmann
Affiliation:
Zentrum für Funktionswerkstoffe gGmbH, Windausweg 2, 37073 Göttingen, Germany
Herbert C. Freyhardt
Affiliation:
Institut für Materialphysik, Windausweg 2, 37073 Göttingen, Germany, and Zentrum für Funktionswerkstoffe gGmbH, Windausweg 2, 37073 Göttingen, Germany
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Abstract

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.

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Articles
Information
Journal of Materials Research , Volume 18 , Issue 2 , February 2003 , pp. 442 - 447
Copyright
Copyright © Materials Research Society 2003

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