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The role of radiation in melt stability in zone-melt recrystallization of SOI

Published online by Cambridge University Press:  31 January 2011

J.A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
L.R. Thompson
Affiliation:
Colorado State University, Ft. Collins, Colorado 80523
G.J. Collins
Affiliation:
Colorado State University, Ft. Collins, Colorado 80523
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Abstract

Under circumstances in Zone-Melt-Recrystallization (ZMR) of Si-on-Insulator (SOI) structures where radiative heat loss is significant, the ∼50% decrease in emissivity when Si melts destabilizes the Si molten zone. We have demonstrated this both experimentally using a slowly scanned e-beam line source and numerically with a finite-element computational simulation. The resulting instability narrows the process window and tightens requirements on beam control and background heating uniformity, both for e-beam ZMR systems and optically-coupled systems such as a graphite strip heater.

Type
Articles
Copyright
Copyright © Materials Research Society 1990

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References

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