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Role of microstructure on the oxidation behavior of microwave plasma synthesized diamond and diamond-like carbon films

Published online by Cambridge University Press:  31 January 2011

Rao R. Nimmagadda ,
A. Joshi  and
W. L. Hsu
Rao R. Nimmagadda
Affiliation:
Lockheed Palo Alto Research Laboratory, Lockheed Missiles and Space Company, 3251 Hanover Street, Palo Alto, California 94304
A. Joshi
Affiliation:
Lockheed Palo Alto Research Laboratory, Lockheed Missiles and Space Company, 3251 Hanover Street, Palo Alto, California 94304
W. L. Hsu
Affiliation:
Lockheed Palo Alto Research Laboratory, Lockheed Missiles and Space Company, 3251 Hanover Street, Palo Alto, California 94304
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Abstract

Oxidation kinetics of microwave plasma assisted CVD diamond and diamond-like carbon (DLC) films in flowing oxygen were evaluated in the temperature range of 500 to 750 °C and were compared with those of graphite and natural diamond. The diamond and DLC films were prepared using CH4/H2 ratios of 0.1, 0.25, 0.5, 1.0, and 2.0%. The films deposited at 0.1% ratio had a faceted crystalline structure with high sp3 content and as the ratio increased toward 2%, the films contained more and more fine crystalline sp2 bonded carbon. The oxidation rates were determined by thermal gravimetric analysis (TGA), which shows that the films deposited at ratios of 2, 1, and 0.5% oxidized at high rates and lie between the rates of natural diamond and graphite. The oxidation rate decreased with lower CH4/H2 ratio and the films deposited at 0.25 and 0.1% exhibited the lowest oxidation rates associated with the highest activation energies in the range of 293–285 kJ/mol · K. The oxidation behavior of microwave plasma assisted diamond films was similar to that of DC plasma assisted CVD diamond films. The results suggest that the same mechanism of oxidation is operational in both DC and microwave plasma assisted diamond films and is probably related to the microstructure and preferred orientation of the crystallites.

Type
Diamond and Diamond-Like Materials
Information
Journal of Materials Research , Volume 5 , Issue 11 , November 1990 , pp. 2445 - 2450
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1Spitsyn, B.V., Bouilov, L. L., and Derjaguin, B.V., J. Cryst. Growth 52, 219 (1981).CrossRefGoogle Scholar
2Ono, A., Baba, T., Funamoto, H., and Nishikawa, A., Jpn. J. Appl. Phys. 25, L808 (1986).CrossRefGoogle Scholar
3Kamo, M., Sato, Y., Matsumoto, S., and Setaka, N., Cryst, J.. Growth 62, 642 (1983).CrossRefGoogle Scholar
4Sawabe, A. and Inuzuka, T., Thin Solid Films 137, 89 (1986).CrossRefGoogle Scholar
5Kitahama, K., Hirata, T., Nakamatsu, H., Kawai, S., Fujimori, N., Imai, T., Yoshino, H., and Doi, A., Appl. Phys. Lett. 49, 634 (1986).CrossRefGoogle Scholar
6Hsu, W. L., Tung, D. M., Fuchs, E. A., McCarty, K. F., Joshi, A., and Nimmagadda, R., Appl. Phys. Lett. 55 (26), 2739 (1989).CrossRefGoogle Scholar
7Properties of Diamond, edited by Field, J. E. (Academic Press, New York, 1979).Google Scholar
8Evans, T. and Phaal, C., Proc. 5th Biennial Conference on Carbon, The Pennsylvania State University, University Park, PA, 147–153 (1962).CrossRefGoogle Scholar
9Joshi, A., Nimmagadda, R., and Herrington, J., J. Vac. Sci. Tech. A8, 2137 (1990).CrossRefGoogle Scholar
10Tung, D. M., Hsu, W. L., and McCarty, K. F., Proc. 1st Int. Symp. on Diamond and Diamond-like Films, 175th Electrochemical Society Meeting, 500 (1989).Google Scholar
11Knight, D. S. and White, W. B., J. Mater. Res. 4, 385 (1989).CrossRefGoogle Scholar