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The role of ion-beam cleaning in the growth of strained-layer epitaxial thin transition metal films

Published online by Cambridge University Press:  31 January 2011

Sung I. Park ,
A. Marshall ,
R. H. Hammond ,
T. H. Geballe  and
J. Talvacchio
Sung I. Park
Affiliation:
Stanford University, Stanford, California 94305
A. Marshall
Affiliation:
Stanford University, Stanford, California 94305
R. H. Hammond
Affiliation:
Stanford University, Stanford, California 94305
T. H. Geballe
Affiliation:
Stanford University, Stanford, California 94305
J. Talvacchio
Affiliation:
Westinghouse Research and Developement Center, Pittsburgh, Pennsylvania 15235
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Abstract

Low-energy ion-beam cleaning of the substrates prior to a deposition greatly enhances the quality of ultrathin (< 100 Å) refractory superconducting (Nb, V) films. Using this technique Nb films as thin as 7 Å have been grown, from which good tunnel junctions have been fabricated. Both the native films and the tunnel junctions are sturdy and can be thermally recycled without any degradation. In-situ surface study along with transmission electron microscopy (TEM) results suggest the removal of the carbon atoms from the surface of the substrate without an apparent surface damage as the causes of the improvement. The TEM results indicate that the Nb films grow perfectly lattice matched to the sapphire substrate when the substrate is ion-beam cleaned. This strained-layer epitaxy is observed up to 40 Å, the maximum thickness investigated through TEM.

Type
Articles
Information
Journal of Materials Research , Volume 2 , Issue 4 , August 1987 , pp. 446 - 455
Copyright
Copyright © Materials Research Society 1987

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References

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