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Role of beam divergence and ion-to-molecule flux ratio in ion-beam-assisted deposition texturing of MgO

Published online by Cambridge University Press:  03 March 2011

Alp T. Findikoglu ,
Sascha Kreiskott ,
Paul M. te Riele  and
Vladimir Matias
Alp T. Findikoglu*
Affiliation:
Superconductivity Technology Center, MS T004, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Sascha Kreiskott
Affiliation:
Superconductivity Technology Center, MS T004, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Paul M. te Riele
Affiliation:
Superconductivity Technology Center, MS T004, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Vladimir Matias
Affiliation:
Superconductivity Technology Center, MS T004, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The effect of process conditions on the biaxial texture of MgO films grown by ion-beam-assisted deposition (IBAD) was studied. The texture showed a strong dependence on the Ar+/MgO flux ratio, but a weak dependence on the divergence of Ar+ beam. One hundred-nanometer-thick epi-MgO on less than 10-nm-thick textured IBAD-MgO films that were grown on 7-nm-thick Y2O3 layers on fused silica, metal alloy tape, and polished Si substrates showed biaxial texture with in- and out-of-plane orientation distributions of less than 4° and 2°, respectively. These results strengthen the notion that the IBAD technique could serve as a universal technological process to integrate amorphous and polycrystalline substrates with various oxide and semiconductor films that need to be grown with good biaxial texture.

Keywords

Ion-beam assisted depositionTextureThin film
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004 , pp. 501 - 504
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Iijima, Y., Tanabe, N., Kohno, O. and Ikeno, Y.: Appl. Phys. Lett. 60, 769 (1992).CrossRefGoogle Scholar
2Reade, R.P., Berdahl, P., Russo, R.E. and Garrison, S.M.: Appl. Phys. Lett. 61, 2231 (1992).CrossRefGoogle Scholar
3Wu, X.D., Foltyn, S.R., Arendt, P., Townsend, J., Adams, C., Campbell, I.H., Tiwari, P., Coulter, Y. and Peterson, D.E.: Appl. Phys. Lett. 65, 1961 (1994).CrossRefGoogle Scholar
4Foltyn, S.R., Arendt, P.N., Dowden, P.C., DePaula, R.F., Groves, J.R., Coulter, J.Y., Jia, Q.J., Maley, M.P. and Peterson, D.E.: IEEE Trans. Appl. Superconduct. 9, 1519 (1999).CrossRefGoogle Scholar
5Wang, C.P., Do, K.B., Beasley, M.R., Geballe, T.H. and Hammond, R.H.: Appl. Phys. Lett. 71, 2955 (1997).CrossRefGoogle Scholar
6Groves, J.R., Arendt, P.N., Foltyn, S.R., DePaula, R.F., Wang, C.P. and Hammond, R.H.: IEEE Trans. Appl. Superconduct. 9, 1964 (1999).CrossRefGoogle Scholar
7Willis, J.O., Arendt, P.N., Foltyn, S.R., Jia, Q.J., Groves, J.R., DePaula, R.F., Dowden, P.C., Peterson, E.J., Holesinger, T.G. and Coulter, J.Y.: Physica C 335, 73 (2000).CrossRefGoogle Scholar
8Finnemore, D.K., Gray, K.E., Maley, M.P., Welch, D.O., Christen, D.K. and Kroeger, D.M.: Physica C 320, 1 (1999).CrossRefGoogle Scholar
9Dimos, D., Chaudhari, P., Mannhart, J. and Legoues, F.K.: Phys. Rev. Lett. 61, 219 (1988).CrossRefGoogle Scholar
10Hirvonen, J.K.: Mater. Sci. 6, 215 (1991).Google Scholar
11Brewer, R.T., Atwater, H.A., Groves, J.R. and Arendt, P.N.: J. Appl. Phys. 93, 205 (2003).CrossRefGoogle Scholar
12Groves, J.R., Yashar, P.C., Arendt, P.N., DePaula, R.F., Peterson, E.J. and Fitzsimmons, M.R.: Physica C 355, 293 (2001).CrossRefGoogle Scholar
13Groves, J.R., Arendt, P.N., Kung, H., Foltyn, S.R., DePaula, R.F., Emmert, L.A. and Storer, J.G.: IEEE Trans. Appl. Superconduct. 11, 2822 (2001).CrossRefGoogle Scholar
14Dong, L., Zepeda-Ruiz, L.A. and Srolovitz, D.J.: J. Appl. Phys. 89, 4105 (2001).CrossRefGoogle Scholar
15Zepeda-Ruiz, L.A. and Srolovitz, D.J.: J. Appl. Phys. 91, 10169 (2002).CrossRefGoogle Scholar
16Huhne, R., Fahler, S., Holzapfel, B., Oertel, C.G., Schultz, L. and Skrotzki, W.: Physica C 372, 825 (2002).CrossRefGoogle Scholar
17Arendt, P.N. (unpublished).Google Scholar
18Kaufman, H.R. and Robinson, R.S.: Operation of Broad-Beam Sources (Commonwealth Scientific Corporation, Alexandria, Virginia, 1987).Google Scholar
19Kahn, J.R., Kaufman, H.R., Phillips, C.A. and Robinson, R.S.: J. Vac. Sci. Technol. A 14, 2106 (1996).CrossRefGoogle Scholar
20Srikant, V., Speck, J.S. and Clarke, D.R.: J. Appl. Phys. 82, 4286 (1997).CrossRefGoogle Scholar
21Specht, E.D., Goyal, A., Lee, D.F., List, F.A., Kroeger, D.M., Paranthaman, M., Williams, R.K. and Christen, D.K.: Supercond. Sci. Technol. 11, 945 (1998).CrossRefGoogle Scholar