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Reversible bending of Si3N4 nanowire

Published online by Cambridge University Press:  31 January 2011

Yingjiu Zhang ,
Nanlin Wang ,
Rongrui He ,
Qi Zhang ,
Jing Zhu  and
Yunjie Yan
Yingjiu Zhang
Affiliation:
Electron Microscopy Laboratory, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
Nanlin Wang
Affiliation:
Electron Microscopy Laboratory, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
Rongrui He
Affiliation:
Electron Microscopy Laboratory, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
Qi Zhang
Affiliation:
Electron Microscopy Laboratory, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
Jing Zhu
Affiliation:
Electron Microscopy Laboratory, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
Yunjie Yan
Affiliation:
Electron Microscopy Laboratory, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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Abstract

A reversible bending phenomenon of Si3N4 nanowires on the conductive carbon–formalin microgrid under an illumination of electron beam was observed using a transmission electron microscope. The nanowires exhibit high flexibility. The bending deflection is approximately proportional to the square of the current density (J) of the electron beam. The bending strength of Si3N4 nanowire is much higher than that of bulk Si3N4 materials. The force that bent the nanowires may be an electrostatic force.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 15 , Issue 5 , May 2000 , pp. 1048 - 1051
Copyright
Copyright © Materials Research Society 2000

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