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Retention of nanostructure in aluminum oxide by very rapid sintering at 1150 °C

Published online by Cambridge University Press:  03 March 2011

Subhash H. Risbud ,
Chien-Hua Shan ,
Amiya K. Mukherjee ,
Moon J. Kim ,
J.S. Bow  and
Richard A. Holl
Subhash H. Risbud
Affiliation:
Division of Materials Science and Engineering, Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616–5294
Chien-Hua Shan
Affiliation:
Division of Materials Science and Engineering, Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616–5294
Amiya K. Mukherjee
Affiliation:
Division of Materials Science and Engineering, Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616–5294
Moon J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287
J.S. Bow
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287
Richard A. Holl
Affiliation:
Holl Technologies Co., Ventura, California 93003
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Abstract

Aluminum oxide powders doped with MgO (300 to 500 nm) were sintered to almost theoretical density within just 10–15 min at 1150 °C using a plasma-activated sintering process based on charging the loosely filled powders with an electric discharge prior to densification by resistance heating. The microstructure of the consolidated disks was examined by high resolution transmission electron microscopy (HREM) and electron energy loss spectroscopy (EELS) and revealed excellent grain to grain contact with virtually no grain growth and structurally clean grain boundaries.

Type
Rapid Communication
Information
Journal of Materials Research , Volume 10 , Issue 2 , February 1995 , pp. 237 - 239
Copyright
Copyright © Materials Research Society 1995

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References

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