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Residual stresses in DLC/Si and Au/Si systems: Application of a stress-relaxation model to the nanoindentation technique

Published online by Cambridge University Press:  31 January 2011

Yun-Hee Lee  and
Dongil Kwon
Yun-Hee Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151–742, Korea
Dongil Kwon*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151–742, Korea
*
a)Address all correspondence to this author.[email protected]
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Abstract

Residual stress in a thin film was analyzed by the nanoindentation technique. Two dominant effects of residual stress to indentation were summarized as the slope change in loading curve and the invariant value of intrinsic hardness. A stress-sensitive reversibly deformed zone around contact was modeled to explain the indentation behaviors under a residually stressed state. Finally, the residual stress was evaluated from the changes in contact shape and applied load during stress relaxation under the condition of constant indentation depth. The residual stresses in diamond-like carbon and Au films analyzed from this model agreed well with the average values measured by the curvature method.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 4 , April 2002 , pp. 901 - 906
Copyright
Copyright © Materials Research Society 2002

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