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Refinement of low-resistance Ni–Ge–Au ohmic contacts to n+ GaAs using screening and response surface experiments

Published online by Cambridge University Press:  31 January 2011

Nancy E. Lumpkin ,
Warren King  and
T. L. Tansley
Nancy E. Lumpkin
Affiliation:
Division of Radiophysics, CSIRO, P.O. Box 77, Epping, New South Wales 2121, Australia
Warren King
Affiliation:
Division of Radiophysics, CSIRO, P.O. Box 77, Epping, New South Wales 2121, Australia
T. L. Tansley
Affiliation:
Physics Department, Semiconductor Science & Technology Laboratories, Macquarie University, New South Wales 2109, Australia
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Abstract

Multivariable screening and response surface experiments have been performed to model ohmic contact resistance (Rc) of a Ni–Ge–Au ohmic metal process for n+ GaAs-based high electron mobility transistors (HEMTs). Seven variables were examined via a fractional factorial screening experiment to rank the effects of each process variable. The results of the screening experiment indicated that the most significant variables were total Ge and Au evaporated thickness, Ge-to-Au ratio, and the post-alloy cooling time. Response surface experiments were designed around these three variables to examine the first- and second-order effects. The results enabled the development of an empirical model of ohmic contact resistance from which a new low value of 0.03 ± 0.03 Ω · mm (one-sigma) was predicted. Twenty confirmation runs on the new process indicated an average Rc of 0.06 ± 0.02 Ω · mm (one-sigma), with a range of 0.02 Ω · mm to 0.11 Ω · mm, a reduction from the previous average process value of 0.14 ± 0.07 Ω · mm (one-sigma).

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 5 , May 1996 , pp. 1238 - 1243
Copyright
Copyright © Materials Research Society 1996

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References

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