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Real-time synchrotron x-ray scattering study of an epitaxial BaTiO3 thin film during heating

Published online by Cambridge University Press:  31 January 2011

Sang Sub Kim  and
Jung Ho Je
Sang Sub Kim
Affiliation:
Department of Materials Science and Metallurgical Engineering, Research and Development Center for Automobile's Parts and Materials, Sunchon National University, Chonnam, Sunchon 540–742, Korea
Jung Ho Je
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790–784, Korea
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Abstract

An epitaxial BaTiO3 film with 290-nm thickness was prepared on a MgO(001) single-crystal substrate by radio-frequency magnetron sputter deposition. The structural characteristics of the film were studied as a function of temperature in in situ, real-time synchroton x-ray scattering experiments. We found that the as-grown film was strained at room temperature and tetragonally distorted with the c axis normal to the film surface. Interestingly, its lattice parameters were found to be expanded 1.28% and 0.64% in both the in-plane and the out-of-plane directions, respectively (i.e., biaxially), comparing to those of a bulk BaTiO3. More importantly, as it was heated to 600 °C, the tetragonal structure was kept up without the phase transition, which is usually observed in other epitaxial ferroelectric thin films.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 9 , September 1999 , pp. 3734 - 3738
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Bihari, B., Kumar, J., Stauf, G.T., Van Buskirk, P.C., and Hwang, C.S., J. Appl. Phys. 76, 1169 (1994).CrossRefGoogle Scholar
2.Zhang, J., Chen, Z., Cui, D., Lu, H., Jiang, N., and Hao, J., Appl. Phys. Lett. 66, 2069 (1995).CrossRefGoogle Scholar
3.Fujimoto, K., Kobayashi, Y., and Kubota, K., Thin Solid Films 169, 249 (1989).CrossRefGoogle Scholar
4.Kaiser, D.L., Vaudin, M.D., Lotter, L.D., Wang, Z.L., Cline, J.P., Hwang, C.S., Marinenko, R.B., and Gillen, J.G., Appl. Phys. Lett. 66, 2801 (1995).CrossRefGoogle Scholar
5.Chen, C.S., Zhao, J., Luo, L., Lu, P., Li, Y.Q., Norris, P., Kear, B., Cosandey, F., Maggiore, C.J., Gallois, B., and Wilkens, B.J., Appl. Phys. Lett. 60, 1144 (1992).Google Scholar
6.Nakazawa, H., Yamane, H., and Hirai, T., Jpn. J. Appl. Phys. 30, 2200 (1991).CrossRefGoogle Scholar
7.Wills, L.A., Wessels, B.W., Richeson, D.S., and Marks, T.J., Appl. Phys. Lett. 60, 41 (1992).CrossRefGoogle Scholar
8.Yano, Y., Iijima, K., Daitoh, Y., Terashima, T., Bando, Y., Watanabe, Y., Kasatani, H., and Terauchi, H., J. Appl. Phys. 76, 7833 (1994).CrossRefGoogle Scholar
9.Srikant, V., Tarsa, E.J., Clarke, D.R., and Speck, J.S., J. Appl. Phys. 77, 1517 (1995).CrossRefGoogle Scholar
10.Kwak, S., Erbil, A., Budai, J.D., Chisholm, M.F., Boatner, L.A., and Wilkens, B.J., Phys. Rev. B 49, 14865 (1994).CrossRefGoogle Scholar
11.Speck, J.S. and Pompe, W., J. Appl. Phys. 76, 466 (1994).CrossRefGoogle Scholar
12.Speck, J.S., Seifert, A., Pompe, W., and Ramesh, R., J. Appl. Phys. 76, 477 (1994).CrossRefGoogle Scholar
13.Kim, S., Hishita, S., Kang, Y.M., and Baik, S., J. Appl. Phys. 78, 5604 (1995).CrossRefGoogle Scholar
14.Stemmer, S., Streiffer, S.K., Hsu, W.Y., and Harmer, M.P., J. Mater. Res. 10, 791 (1995).CrossRefGoogle Scholar
15.Kim, S., Park, Y., Kang, Y., Park, W., Baik, S., and Gruverman, A.L., Thin Solid Films 312, 249 (1998).CrossRefGoogle Scholar
16.Warren, B.E., X-ray Diffraction (Addison-Wesley, Reading, MA, 1969), Chap. 13.Google Scholar
17.Xu, Y., Ferroelectric Materials and Their Applications (Elsevier Science Publishers B.V., Amsterdam, 1991), p. 106.Google Scholar
18.Iijima, K., Tomita, Y., Takayama, R., and Ueda, I., J. Appl. Phys. 60, 361 (1986).CrossRefGoogle Scholar
19.Chen, Y.F., Yu, T., Chen, J.X., Shun, L., Li, P., and Ming, N.B., Appl. Phys. Lett. 66, 148 (1995).CrossRefGoogle Scholar
20.Kim, S., Kang, Y.M., and Baik, S., J. Am. Ceram. Soc. 79, 1105 (1996).CrossRefGoogle Scholar