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Reactive ion etching of PbZr1−x TixO3 and RuO2 films by environmentally safe gases

Published online by Cambridge University Press:  03 March 2011

Wei Pan ,
S.B. Desu ,
In K. Yoo  and
Dilip P. Vijay
Wei Pan
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg. Virginia 24061-0237
S.B. Desu*
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg. Virginia 24061-0237
In K. Yoo
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg. Virginia 24061-0237
Dilip P. Vijay
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg. Virginia 24061-0237
*
a)Author to whom correspondence should be addressed.
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Abstract

A new process for the reactive ion etching (RIE) of both PbZr1−x TixO3 (PZT) thin films and RuO2 electrodes is presented, employing etching gases with low ozone depletion potential (ODP) and global warming potential (GWP). The etching process has been investigated as a function of etching time, discharge power density, chamber pressure, and additive gas. Etch rates were in the range of 250–650 Å/min and 100–400 Å/min for PZT and RuO2, respectively. A large etch selectivity between PZT and RuO2 was optimized. Etched surfaces exhibited smooth morphologies. Furthermore, the ferroelectric properties of PZT were not altered significantly by the etching process. A surface residue containing Cl and F was found after etching, but this organic substance was totally removed by an after-etch bake. In addition, the etched profile of the PZT films was studied through SEM.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 11 , November 1994 , pp. 2976 - 2980
Copyright
Copyright © Materials Research Society 1994

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References

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