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The reaction sequence and microstructure evolution of an MgB2 layer during ex situ annealing of amorphous boron film

Published online by Cambridge University Press:  03 March 2011

Hyun-Mi Kim ,
Sung-Soo Yim ,
Ki-Bum Kim ,
Dae-Hwan Kang ,
Seung-Hyun Moon ,
Young-Woon Kim  and
Ho-Nyun Lee
Hyun-Mi Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Sung-Soo Yim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Ki-Bum Kim*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Dae-Hwan Kang
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Seung-Hyun Moon
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Young-Woon Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Ho-Nyun Lee
Affiliation:
LG Electronics Institute of Technology, Seoul 137-724, Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The reaction sequence and microstructure evolution of a crystalline MgB2 layer were examined during ex situ annealing of evaporated amorphous boron (a-B) with Mg vapor. Mg was found to migrate rapidly into the a-B layer in the initial stage of reaction with a uniform concentration of about 12 at.%. A thin layer of crystalline MgO was observed at the interface between a-B and the Al2O3 substrate. It was identified that an MgB2 layer started to form at the surface by the nucleation and growth process in polycrystalline form. It appears that there exists two distinct growth fronts in the MgB2 layer: one lying at the surface and the other lying at the interface between the MgB2 layer and the a-B. The microstructural evolution of this layer showed significant differences depending on the location of these two growth fronts.

Keywords

Nucleation & growthSuperconductorTransmission electron microscopy (TEM)
Type
Rapid Communications
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004 , pp. 409 - 412
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Nagamatsu, J., Nakagawa, N., Muranaka, T., Zenitani, Y. and Akimitsu, J.: Nature 410, 63 (2001).Google Scholar
2Paranthaman, M., Cantoni, C., Zhai, H.Y., Christen, H.M., Aytug, T., Sathyamurthy, S., Specht, E.D., Thompson, J.R., Lowndes, D.H., Kerchner, H.R. and Christen, D.K.: Appl. Phys. Lett. 78, 3669 (2001).Google Scholar
3Zhai, H.Y., Christen, H.M., Zhang, L., Paranthaman, M., Cantoni, C., Sales, B.C., Fleming, P.H., Christen, D.K. and Lowndes, D.H.: J. Mater. Res. 16, 2759 (2001).CrossRefGoogle Scholar
4Bu, S.D., Kim, D.M., Choi, J.H., Giencke, J., Hellstrom, E.E., Larbalestier, D.C., Patnaik, S., Cooley, L., Eom, C.B., Lettieri, J., Schlom, D.G., Tian, W. and Pan, X.Q.: Appl. Phys. Lett. 81, 1851 (2002).CrossRefGoogle Scholar
5Tian, W., Pan, X.Q., Bu, S.D., Kim, D.M., Choi, J.H., Patnaik, S. and Eom, C.B.: Appl. Phys. Lett. 81, 685 (2001).CrossRefGoogle Scholar
6Moon, S.H., Yun, J.H., Lee, H.N., Kye, J.I., Kim, H.G., Chung, W. and Oh, B.: Appl. Phys. Lett. 79, 2429 (2001).Google Scholar
7Deal, B.E. and Grove, A.S.: J. Appl. Phys. 36, 3770 965Google Scholar