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Rapid Growth of Nd2−xCexCuO4 Thick Films as a Buffer for the Growth of Rare-earth Barium Cuprate–coated Conductors

Published online by Cambridge University Press:  31 January 2011

Xiaoding Qi ,
Masood Soorie ,
Zainovia Lockman  and
Judith L. MacManus-Driscoll
Xiaoding Qi*
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, United Kingdom
Masood Soorie
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, United Kingdom
Zainovia Lockman
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, United Kingdom
Judith L. MacManus-Driscoll
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, United Kingdom
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Nd2−xCexCuO4 (x = 0 to 0.15) thick films were grown directly on LaAlO3 substrates and surface-oxidized Ni tapes by fast liquid-phase processing methods. The films had a smooth surface and a very good biaxial texture, with the full width at halfmaximum equal to 0.8° and 5° on LaAlO3 substrates and surface-oxidized Ni tapes, respectively. Films of thickness of 5–15 μmm were grown at rates in excess of 2 μm/min. Nd2−xCexCuO4 has a good lattice and thermal-expansion match to rare-earth Ba2Cu3O7−δ (REBCO), minimum reaction with the high-temperature CuO:BaO solutions, and is nonpoisoning to superconductivity. It is an ideal buffer for liquidphase expitaxy processing of REBCO thick films.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 17 , Issue 1 , January 2002 , pp. 1 - 4
Copyright
Copyright © Materials Research Society 2002

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