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Raman-based analysis of implantation-induced expansion and stresses in sapphire crystals

Published online by Cambridge University Press:  03 March 2011

V.N. Gurarie ,
P.H. Otsuka ,
D.N. Jamieson  and
S. Prawer
V.N. Gurarie*
Affiliation:
School of Physics, MARC, University of Melbourne, Melbourne 3010, Australia
P.H. Otsuka
Affiliation:
School of Physics, MARC, University of Melbourne, Melbourne 3010, Australia
D.N. Jamieson
Affiliation:
School of Physics, MARC, University of Melbourne, Melbourne 3010, Australia
S. Prawer
Affiliation:
School of Physics, MARC, University of Melbourne, Melbourne 3010, Australia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Raman spectroscopy was used to determine the lattice expansion and stress distribution within the ion implanted layer in sapphire crystals. The crystals with the (1120) facewere implanted with 3.0 MeV H+ ions to doses of 3.3 × 1017 cm−2 and 4.8 × 1017 cm−2.The strain components and their variation with depth were analyzed by measuring the shift of the Raman peak on the cross-sectional basal plane. A continuum mechanics approach considered a model of a semi-infinite anisotropic elastic space subjected to the implantation-induced lattice expansion. The expansion and resulting compressive stresses were found to increase with depth, reaching a sharp maximum at the end of the ion range. The implantation-induced expansion coefficient was shown to be independent of the ion energy loss and implantation depth in sapphire. Such behavior was discussed in light of stopping and range of ions in matter data and defect production by nuclear collisions and ionization processes.

Keywords

DefectsRadiation effectsRaman spectroscopy
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 5 , May 2005 , pp. 1131 - 1138
Copyright
Copyright © Materials Research Society 2005

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