Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-26T03:32:17.109Z Has data issue: false hasContentIssue false
  • English
  • Français

Raman study of gaseous bubble inclusions in bismuth germanate and bismuth germanium silicon oxide single crystals

Published online by Cambridge University Press:  06 January 2012

V. Vaithianathan ,
R. Kesavamoorthy ,
C. V. Kannan ,
P. Santhanaraghavan  and
P. Ramasamy
V. Vaithianathan
Affiliation:
Crystal Growth Centre, Anna University, Chennai-600 025, India
R. Kesavamoorthy
Affiliation:
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102, India
C. V. Kannan
Affiliation:
Crystal Growth Centre, Anna University, Chennai-600 025, India
P. Santhanaraghavan
Affiliation:
Department of Physics, MIT Campus, Anna University, Chennai-600 044, India
P. Ramasamy
Affiliation:
Crystal Growth Centre, Anna University, Chennai-600 025, India
Get access

Abstract

Gaseous bubble inclusions in bismuth germanate (BGO) and bismuth germanium silicon oxide (BGSO) crystals were studied by means of Raman spectroscopy at room temperature. Their Raman spectra in the range from 60 to 70 cm−1 showed three peaks for the rotational Raman modes of O2 and N2. Vibrational Raman modes of O2 and N2 were also recorded for BGO and BGSO crystals. It was found that all the rotational and vibrational modes were blue shifted from those of free molecules due to the hydrostatic pressure in the bubbles. Internal pressure in the bubbles was estimated from the rotational and vibrational Raman mode frequencies. O2 gas pressure in the bubble was estimated as 140 GPa, and N2 gas pressure, as 31 GPa. The pressure coefficient of the vibrational mode frequency of O2 (0.368 cm−1/GPa for O2 vibrational mode of 1580 cm−1) and N2 (0.322 cm−1/GPa for N2 vibrational mode of 2331 cm−1) was also obtained from the blue shift and the calculated bubble pressure.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 4 , April 2003 , pp. 762 - 767
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Schweitzer, J.S., Proceedings of International Workshop on Bismuth Germanate (Department of Physics, Princeton University, Princeton, NJ, 1982), p. 696.Google Scholar
Nassau, K. and Broyer, A.M., J. Appl. Phys. 33, 3064 (1962).CrossRefGoogle Scholar
Miyazawa, S., J. Cryst. Growth 49, 515 (1980).CrossRefGoogle Scholar
Chaubal, P.C. and Nagamori, M., Met. Trans. B 138, 339 (1982).CrossRefGoogle Scholar
Beck, E. and Kemmler, S.-Sack, J. Less-Common Met. 135, 257 (1987).CrossRefGoogle Scholar
Lim, L.C., Tan, L.K., and Zeng, H.C., J. Cryst. Growth. 167, 686 (1996).CrossRefGoogle Scholar
Durif, C.R., Hebd, C.R.. Seances Acad. Sci. (Senac: Paris) 244, 2815 (1957).Google Scholar
Radeev, S.F., Muradyan, L.A., Kargin, U.F., Sarin, V.A., Kanepti, V.N., and Simonov, V.I., Kristalografia 35, 361 (1990) (in Russian).Google Scholar
Claus, R., Phys. Status Solidi 50, 11 (1972).CrossRefGoogle Scholar
Poulet, H., Ann. Phys. (Paris) 10, 908 (1955).Google Scholar
Boer, R.C. de, Loordrecht, P.H.M van, and Mecckes, H.L.M., J. Cryst. Growth 140, 361 (1994).CrossRefGoogle Scholar
Mihailova, B., Toncheva, D., Gospodinov, M., and Konstantinov, L., Solid State Commun. 12, 11 (1999).CrossRefGoogle Scholar
Wilcox, W. and Kuo, V.H.S., J. Cryst. Growth 19, 221 (1973).CrossRefGoogle Scholar
Picone, P.J., J. Cryst. Growth 87, 421 (1998).CrossRefGoogle Scholar
Berkowski, M., Iliev, K., Nikolov, V., Peshev, P., and Piekarczyk, W., J. Cryst. Growth 108, 225 (1991).CrossRefGoogle Scholar
Grabmaier, J.G., Plattner, R.D., and Schieber, M., J. Cryst. Growth 20, 82 (1973).CrossRefGoogle Scholar
Foldva´ri, I., Raksanyi, K., Voszka, R., Hartmann, E., and Peter, A., J. Cryst. Growth 52, 561 (1981).CrossRefGoogle Scholar