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Raman scattering and x-ray diffraction characterization of amorphous semiconductor multilayer interfaces

Published online by Cambridge University Press:  31 January 2011

D.D. Allred ,
J. Gonzalez-Hernandez ,
O.V. Nguyen ,
D. Martin  and
D. Pawlik
D.D. Allred
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
J. Gonzalez-Hernandez
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
O.V. Nguyen
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
D. Martin
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
D. Pawlik
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

Raman spectroscopy (RS) and low-angle x-ray diffraction (LAXRD) have been used to characterize semiconductor multilayer interfaces. In the present study a model for Raman spectra of multilayers is developed and applied to the specific case of the interfaces of a-Si/a-Ge multilayers. Quantification of the “blurring” of interfaces is possible because peak heights in the Raman spectra of thin films are proportional to the number of scatterers, thus RS is capable of directly “counting” the total number of chemical bonds of a given type in the film. Multilayers, prepared by various deposition techniques, are compared. The relative roles of LAXRD and RS in investigating interfaces are contrasted. Several a-Si/a-Ge multilayers deposited by ultra-high vacuum (UHV) evaporation (MBD) are found to exhibit very regular periodicities and exceptionally sharp interfaces (<1.0 Å intermixing).

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 3 , June 1986 , pp. 468 - 475
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1Kakalios, J., Fritzsche, H., Ibaraki, N., and Ovshinsky, S. R., J. Non-Cryst. Solids 66, 339 (1984).CrossRefGoogle Scholar
2Abeles, B. and Tiedje, T., Phys. Rev. Lett. 51, 2003 (1983).CrossRefGoogle Scholar
3Application of Thin Film Multilayer Structures to Figures X-Ray Optics, SPIE Conference Proceedings, Vol. 563 (SPIE, Bellingham, WA, 1965), see, for example, p. 238; A. M. Kadin and J. E. Keem, Scr. Metall. 20, 443 (1986).Google Scholar
4Underwood, J. H. and Barbee, T. W. Jr. , AIP Conference Proceedings No. 75 on Low Energy X-Ray Diagnostics (American Institute of Physics, New York, 1981), p. 170.Google Scholar
5Maley, N. and Lannin, J. S., Phys. Rev. B 31, 5577 (1985).CrossRefGoogle Scholar
6Persans, P. D., Ruppert, A. F., Abeles, B., and Tiedje, T., Phys. Rev. B 32, 5588 (1985).CrossRefGoogle Scholar
7Gonzales-Hernandez, J., Allred, D. D., Nguyen, O. V., Martin, D., and Pawlik, D., in Layered Structures and Epitaxy, edited by Gibson, J. M., Osbourn, G. C., and Tromp, R. M., Materials Research Society Symposium Proceedings, Vol. 56 (MRS, Pittsburgh, PA, 1986), pp. 389.Google Scholar
8Greer, A. L. and Spaepan, F., Synthetic Modulated Structures, edited by Chang, L. and Giessen, B. C. (Academic, New York, 1985), p. 419.CrossRefGoogle Scholar
9Agarwal, S. C. and Guha, S., Phys. Rev. B 31, 5547 (1985).Google Scholar
10Allred, D. D. and Piontkowski, J. A., in the Proceedings of the Ninth International Conference on Chemical Vapor Deposition (The Electrochemical Society, Pennington, NJ, 1984), p. 548.Google Scholar
11Tsu, R., Gonzalez-Hernandez, J., Doehler, J., and Ovshinsky, S. R., Solid State Commun. 46, 79 (1983).CrossRefGoogle Scholar
12Tsu, R., Gonzalez-Hernandez, J., Chao, S. S., Lee, S. C., and Tanaka, K., Appl. Phys. Lett. 40, 534 (1982).CrossRefGoogle Scholar
13Smith, J. E. Jr. , Brodsky, M. H., Crowder, B. L., Nathan, M. I., and Pinczuk, A., Phys. Rev. Lett. 40, 534 (1982).Google Scholar
14Yndurian, F., Phys. Rev. Lett. 37, 1062 (1976).Google Scholar
15Nguyen, O. V., Allred, D. D., and Gonzales-Hernandez, J. (unpublished).Google Scholar
16Chao, S. S., Gonzalez-Hernandez, J., Martin, D., and Tsu, R., Appl. Phys. Lett. 46, 1089 (1985).CrossRefGoogle Scholar
17Wolfe, R., Applied Solid State Science (Academic, New York, 1969), p. 210.Google Scholar
18Collins, R., Windichmann, H., Cavese, H., and Gonzalez-Hernan-dez, J., J. Appl. Phys. 58, 945 (1985).CrossRefGoogle Scholar