Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-26T03:51:04.487Z Has data issue: false hasContentIssue false
  • English
  • Français

Raman scattering and electrical conductivity in highly disordered activated carbon fibers

Published online by Cambridge University Press:  31 January 2011

A.W.P. Fung ,
A.M. Rao ,
K. Kuriyama ,
M.S. Dresselhaus ,
G. Dresselhaus ,
M. Endo  and
N. Shindo
A.W.P. Fung
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
A.M. Rao
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
K. Kuriyama
Affiliation:
Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
M.S. Dresselhaus
Affiliation:
Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
G. Dresselhaus
Affiliation:
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
M. Endo
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Shinshu University, Nagano 380, Japan
N. Shindo
Affiliation:
Osaka Gas Co., Konohana-ku, Osaka 544, Japan

Abstract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

Because of their unusually large specific surface area (SSA), Activated Carbon Fibers (ACF's) have a huge density of micropores and defects. The Raman scattering technique and low-temperature dc electrical conductivity measurements were used as characterization tools to study the disorder in ACF's with SSA ranging from 1000 m2/g to 3000 m2/g. Two peaks were observed in every Raman spectrum for ACF's and they could be identified with the disorder-induced peak near ∼1360 cm−1 and the Breit–Wigner–Fano peak near ∼1610 cm−1 associated with the Raman-active E2g2 mode of graphite. The graphitic nature of the ACF's is shown by the presence of a well-defined graphitic structure with La values of 20–30 Å. We observed that the Raman scattering showed more sensitivity to the precursor materials than to the SSA of the ACF's. From 4 K to room temperature, the dc electrical resistivity in ACF's is observed to follow the exp [(T0/T)1/2] functional form and it can be accounted for by a charge-energy-limited tunneling conduction mechanism. Coulomb-gap conduction and n-dimensional (n ≤ 3) variable-range hopping conduction models were also considered but they were found to give unphysical values for their parameters.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 3 , March 1993 , pp. 489 - 500
Copyright
Copyright © Materials Research Society 1993

References

REFERENCES

1Nishino, A., Tanso (Carbon Society of Japan) 132, 57 (1988).Google Scholar
2Kaneko, K. and Shindo, N., Carbon 27, 815 (1989).Google Scholar
3Tanaka, E., Fuel and Combustion 54, 241 (1987).Google Scholar
4Smisek, M. and Cerny, S., Active Carbon: Manufacture, Properties and Applications (American Elsevier Publishing Company, New York, 1967).Google Scholar
5Saperstein, D.D., J. Phys. Chem. 90, 3883 (1986).Google Scholar
6Mclntosh, R., Haines, R. S., and Benson, G. C., J. Chem. Phys. 15, 17 (1947).Google Scholar
7Smeltzer, W. W. and Mclntosh, R., Can. J. Chem. 31, 1239 (1953).CrossRefGoogle Scholar
8Vittorio, S. L. di, Dresselhaus, M. S., Endo, M., Issi, J. P., Piraux, L., and Bayot, V., J. Mater. Res. 6, 778 (1991).CrossRefGoogle Scholar
9Kuriyama, K. and Dresselhaus, M. S., J. Mater. Res. 6, 1040 (1991).CrossRefGoogle Scholar
10Elman, B. S., Dresselhaus, M. S., Dresselhaus, G., Maby, E. W., and Mazurek, H., Phys. Rev. B 24, 1027 (1981).Google Scholar
11Dresselhaus, M.S. and Dresselhaus, G., in Light Scattering in Solids HI, Topics in Applied Physics, edited by Cardona, M. and Giintherodt, G. (Springer, Berlin, Heidelberg, 1982), Vol. 51, p. 3.CrossRefGoogle Scholar
12Chieu, T. C., Dresselhaus, M. S., and Endo, M., Phys. Rev. B 26, 5867 (1982).Google Scholar
13Dacey, J. R., Quinn, D. F., and Gallagher, J. T., Carbon 4, 73 (1966).CrossRefGoogle Scholar
14Carmona, F., Delhaes, P., Keryer, G., and Manceau, J. P., Solid State Commun. 14, 1183 (1974).CrossRefGoogle Scholar
15Hanawa, T. and Kakinoki, J., Carbon 1, 403 (1964).CrossRefGoogle Scholar
16Heremans, J., Carbon 23, 431 (1985).CrossRefGoogle Scholar
17Delhaes, P. and Carmona, F., in Chemistry and Physics of Carbon, edited by Walker, P.L. Jr., and Thrower, P. A. (Marcel Dekker, Inc., New York, 1981), Vol. 17, p. 89.Google Scholar
18Baker, Dennis F. and Bragg, Robert H., Phys. Rev. B 28, 2219 (1983).Google Scholar
19Mott, N. F., Conduction in Non-Crystalline Materials (Oxford University Press, New York, 1987).Google Scholar
20Hill, R.M., Phys. Status Solidi A35, K29 (1976).Google Scholar
21Zabrodskii, A.G., Sov. Phys.-Semicond. 11, 345 (1977).Google Scholar
22Press, W. H., Flannery, B. P., Teukolsky, S. A., and Vetterling, W. T., Numerical Recipes in C (Cambridge University Press, New York, 1988).Google Scholar
23Fung, A. W. P., Characterization of Activated Carbon Fibers, Master's Thesis, Department of Electrical Engineering and Computer Science, MIT, 1991.Google Scholar
24Knight, D. S. and White, W. B., J. Mater. Res. 4, 385 (1989).CrossRefGoogle Scholar
25Dresselhaus, M.S., Dresselhaus, G., Sugihara, K., Spain, I.L., and Goldberg, H. A., Graphite Fibers and Filaments (Springer, Berlin, Heidelberg, 1988).CrossRefGoogle Scholar
26Chan, C. T., Ho, K. M., and hara, W. A. Kamitak, Phys. Rev. B 36, 3499 (1987).Google Scholar
27M. Endo (unpublished).Google Scholar
28Efros, A. L. and Shklovskii, B. I., J. Phys. C8, L49 (1975).Google Scholar
29Zabrodskii, A. G., Sov. Phys.-Semicond. 14, 781 (1980).Google Scholar
30Abeles, B., Sheng, P., Courts, M. D., and Arie, Y., Adv. Phys. 24, 407 (1975).CrossRefGoogle Scholar
31Shklovskii, B.I. and Efros, A. L., Electronic Properties of Doped Semiconductors (Springer, Berlin, Heidelberg, 1984).CrossRefGoogle Scholar
32Vittorio, S. L. di, Dresselhaus, M. S., Enoki, T., Endo, M., and Nakajima, T., Phys. Rev. (1992), in preparation.Google Scholar
33Kelly, B. T., Physics of Graphite (Applied Science, London, 1981).Google Scholar
34Adkins, C. J., in Hopping and Related Phenomena, edited by Fritzsche, H. and Pollak, M. (World Scientific Publishing Company, Singapore, 1990), p. 93.CrossRefGoogle Scholar
35Shklovskii, B. I., Sov. Phys.-Semicond. 6, 1964 (1973).Google Scholar