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Pulsed laser deposition of titanium nitride films on sapphire

Published online by Cambridge University Press:  31 January 2011

V. Talyansky ,
S. Choopun ,
M.J. Downes ,
R. P. Sharma ,
T. Venkatesan ,
Y. X. Li ,
L. G. Salamanca-Riba ,
M. C. Wood ,
R. T. Lareau  and
K. A. Jones
V. Talyansky
Affiliation:
Center for Superconductivity Research, Department of Physics University of Maryland, College Park, Maryland 20742
S. Choopun
Affiliation:
Center for Superconductivity Research, Department of Physics University of Maryland, College Park, Maryland 20742
M.J. Downes
Affiliation:
Center for Superconductivity Research, Department of Physics University of Maryland, College Park, Maryland 20742
R. P. Sharma
Affiliation:
Center for Superconductivity Research, Department of Physics University of Maryland, College Park, Maryland 20742
T. Venkatesan
Affiliation:
Center for Superconductivity Research, Department of Physics University of Maryland, College Park, Maryland 20742
Y. X. Li
Affiliation:
Department of Materials and Nuclear Engineering University of Maryland, College Park, Maryland 20742
L. G. Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering University of Maryland, College Park, Maryland 20742
M. C. Wood
Affiliation:
U.S. Army Research Laboratory AMSRL-PS-DB, Adelphi, Maryland 20783
R. T. Lareau
Affiliation:
U.S. Army Research Laboratory AMSRL-PS-DB, Adelphi, Maryland 20783
K. A. Jones
Affiliation:
U.S. Army Research Laboratory AMSRL-PS-DB, Adelphi, Maryland 20783
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Abstract

We successfully deposited high-quality TiN films on c-plane sapphire by using the pulsed laser deposition technique. TiN grew on sapphire with two in-plane epitaxial relationships: (111)TiN//(0001)sapphire and [101]TiN//[1100]sapphire or (111)TiN// (0001)sapphire and [101]TiN//[1100]sapphire. The TiN unit cell showed a ±30° in-plane rotation for sapphire. The misfit between the TiN film and the sapphire substrate was calculated by using the near coincidence site lattice approach. The deposited films were analyzed by x-ray diffraction, transmission electron microscopy, atomic force microscopy, Rutherford backscattering or channeling spectrometry, electrical, and spectrophotometric measurements. The dependence of the film's crystalline quality on the deposition temperature has been investigated. The full width half-maximum of the rocking curve of the TiN 111 peak was 0.2–0.3°. The minimum ion channeling was 5%, and the room temperature resistivity was as low as 13 μω cm.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 8 , August 1999 , pp. 3298 - 3302
Copyright
Copyright © Materials Research Society 1999

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References

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