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Prospects of direct growth boron nitride films as substrates for graphene electronics

Published online by Cambridge University Press:  25 November 2013

Michael S. Bresnehan ,
Matthew J. Hollander ,
Maxwell Wetherington ,
Ke Wang ,
Takahira Miyagi ,
Gregory Pastir ,
David W. Snyder ,
Jamie J. Gengler ,
Andrey A. Voevodin  and
William C. Mitchel
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Michael S. Bresnehan
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802; Electro-Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802; and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802
Matthew J. Hollander
Affiliation:
Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802; and Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
Maxwell Wetherington
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802; Electro-Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802; and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802
Ke Wang
Affiliation:
Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Takahira Miyagi
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802; and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Gregory Pastir
Affiliation:
Electro-Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802
David W. Snyder
Affiliation:
Electro-Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802; and Department of Chemical Engineering; The Pennsylvania State University, University Park, Pennsylvania 16802
Jamie J. Gengler
Affiliation:
Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, Ohio 45433; and Spectral Energies, LLC, Dayton, Ohio 45431
Andrey A. Voevodin
Affiliation:
Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, Ohio 45433
William C. Mitchel
Affiliation:
Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, Ohio 45433
Joshua A. Robinson*
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802; and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x reduction in the root-mean-square surface roughness of h-BN films when compared to a high temperature growth on Al2O3(0001) and Si(111) substrates. Additionally, the stoichiometry is shown to be highly dependent on the initial polyborazylene deposition temperature. Importantly, chemical vapor deposition (CVD) graphene transferred to direct-grown boron nitride films on Al2O3 at 400 °C results in a >1.5x and >2.5x improvement in mobility compared to CVD graphene transferred to Al2O3 and SiO2 substrates, respectively, which is attributed to the combined reduction of remote charged impurity scattering and surface roughness scattering. Simulation of mobility versus carrier concentration confirms the importance of limiting the introduction of charged impurities in the h-BN film and highlights the importance of these results in producing optimized h-BN substrates for high performance graphene and TMD devices.

Keywords

hexagonal boron nitridegraphenetransition metal dichalcogenidesammonia boranepolyborazyleneh-BNCVDdielectric
Type
Articles
Information
Journal of Materials Research , Volume 29 , Issue 3: Focus Issue: Graphene and Beyond , 14 February 2014 , pp. 459 - 471
Copyright
Copyright © Materials Research Society 2013 

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