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Prospects for device implementation of wide band gap semiconductors

Published online by Cambridge University Press:  29 June 2016

J. H. Edgar
J. H. Edgar*
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506
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Abstract

Diamond, silicon carbide, gallium nitride, aluminum nitride, and boron nitride are currently under development for both electronic and optoelectronic semiconductor devices. Predictions based on their physical properties indicate that devices made from these materials should be far superior to currently available devices in high power, high frequency, and short wavelength applications. Yet actual device implementation requires that adequate materials processing technology exists. In this review, the current state of the art for producing semiconductor devices from these materials is evaluated, and recommendations for areas needing further research are outlined.

Type
Commentaries and Reviews
Information
Journal of Materials Research , Volume 7 , Issue 1 , January 1992 , pp. 235 - 252
Copyright
Copyright © Materials Research Society 1992

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References

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