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Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemes

Published online by Cambridge University Press:  03 March 2011

Yu Zhu ,
Kathleen A. Dunn  and
Alain E. Kaloyeros
Yu Zhu
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany, State University of New York, Albany, New York, 12203
Kathleen A. Dunn
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany, State University of New York, Albany, New York, 12203
Alain E. Kaloyeros*
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany, State University of New York, Albany, New York, 12203
*
b) Address all correspondence to this author. e-mail: [email protected]
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Abstract

A thermal metalorganic atomic layer deposition (ALD) process was developed for the in situ, sequential growth of Pt/TaNx stacks for use as barrier/seed stacks for subsequent copper electroplating. Ultrathin platinum films were deposited by alternating pulses of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen (O2) as co-reactants. An ALD process window was established and optimized by investigating saturation of Pt film-growth rate versus MeCpPtMe3 and O2 exposure as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (300 °C) ALD Pt process yielded uniform and continuous Pt films with typical carbon and oxygen impurity levels around, respectively, 2.5 and 1 at.%. Film conformality was nearly 100% in 120-nm trench structures with 11:1 aspect ratio.

Keywords

Atomic layer depositionBarrier layerElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 5 , May 2007 , pp. 1292 - 1298
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1van der Straten, O., Zhu, Y., Dunn, K., Eisenbraun, E.T., and Kaloyeros, A.E.: Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes. J. Mater. Res. 19, 447 (2004).CrossRefGoogle Scholar
2Rosenberg, R., Edelstein, D.C., Hu, C-K., and Rodbell, K.P.: Copper metallization for high performance silicon technology. Annu. Rev. Mater. Sci. 30, 229 (2000).CrossRefGoogle Scholar
3 International Technology Roadmap for Semiconductors: ITRS Committee (2004).Google Scholar
4Kim, H.: Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing. J. Vac. Sci. Technol., B 21, 2231 (2003).CrossRefGoogle Scholar
5Hausmann, D., Becker, J., Wang, S., and Gordon, R.: Rapid vapor deposition of highly conformal silica nanolaminates. Science 298, 402 (2002).CrossRefGoogle ScholarPubMed
6Torndahl, T., Ottosson, M., and Carlsson, J.O.: Growth of copper metal by atomic layer deposition using copper (1) chloride, water and hydrogen as precursors. Thin Solid Films 458, 129 (2004).CrossRefGoogle Scholar
7Lane, M.W., Murray, C.E., McFeely, F.R., Vereecken, P.M., and Rosenberg, R.: Linear materials for direct electrodeposition of Cu. Appl. Phys. Lett. 83, 2330 (2003).CrossRefGoogle Scholar
8Martensson, P. and Carlsson, J.O.: Atomic layer epitaxy of copper. Growth and selectivity in the Cu(11)-2,2,6,6-tetramethyl-3,5-heptanedionate/H2 process. J. Electrochem. Soc. 145, 2926 (1998).CrossRefGoogle Scholar
9Garcia, J.R. Vargas and Goto, T.: Chemical vapor deposition of iridium, platinum, rhodium and palladium. Mater. Trans. 44, 1717 (2003).Google Scholar
10Hiratani, M., Nabatame, T., Matsui, Y., Imagawa, K., and Kimura, S.: Platinum film growth by chemical vapor deposition based on autocatalytic oxidative decomposition. J. Electrochem. Soc. 148, C524 (2001).CrossRefGoogle Scholar
11Aaltonen, T., Ritala, M., Sajavaara, T., Keinone, J., and Leskelä, M.: Atomic layer deposition of platinum thin films. Chem. Mater. 15, 1924 (2003).CrossRefGoogle Scholar
12Hiratani, M., Nabatame, T., Matsui, Y., and Kimura, S.: Crystallographic and electrical properties of platinum film grown by chemical vapor deposition using (methylcyclopentadienyl) trimethylplatinum. Thin Solid Films 410, 200 (2002).CrossRefGoogle Scholar
13Wilk, G.D., Wallace, R.M., and Anthony, J.M.: High-k gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89, 5243 (2001).CrossRefGoogle Scholar
14Choi, E-S., Yoon, S-G., Choi, W-Y., and Kim, H-G.: Integration of platinum bottom electrode on poly-Si for ferroelectric thin films. Appl. Surf. Sci. 141, 77 (1999).CrossRefGoogle Scholar
15Xue, Z., Strouse, M.J., Shuh, D.K., Knobler, C.B., Kaesz, H.D., Hicks, R.F., and Williams, R.S.: Characterization of (methylcyclopentadienyl)trimethylplatinum and low-temperature organometallic chemical vapor deposition of platinum metal. J. Am. Chem. Soc. 111, 8779 (1989).CrossRefGoogle Scholar